Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

Akgül, Güvenç; Akgül, Funda Aksoy; Ünalan, Hüsnü Emrah; Turan, Raşit

doi:10.1080/14786435.2016.1154207

Cited by 19 publications

(2 citation statements)

References 48 publications

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“…The average Effect of Annealing on Metal-Oxide Nanocluster DOI: http://dx.doi.org /10.5772/intechopen.82267 crystallite size of the ZnO nanocluster and SiO x /ZnO heterostructure nanocluster was found to be ~7.101 and ~10.14 nm respectively. The increase in crystallite size suggests the decrease in the existence of grain boundaries in the SiO x /ZnO heterostructure nanocluster [29]. Moreover, the decrease in the average lattice strain observed from 0.01641 (ZnO nanocluster) to 0.01336 (SiO x /ZnO heterostructure nanocluster).…”

Section: Zno Nanoclustermentioning

confidence: 89%

Effect of Annealing on Metal-Oxide Nanocluster

Singh¹,

Rajkumari²

2019

Concepts of Semiconductor Photocatalysis

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Recently, the development of optoelectronic devices based on metal-oxide nanocluster has attracted intensive research interest. Nanoclusters are suitable for these because of their large surface-to-volume ratio and the presence of abundant oxygen vacancies or trap states. Metal-oxides such as ZnO, In 2 O 3 , and TiO 2 synthesized using different technique produces high surface area films consisting of clusters and provides complete control over the film morphology. In this chapter, some of the metal oxides nanocluster film has investigated, and the effect of annealing on the structural, optical and electrical properties of the grown films when subjected to different annealing temperatures will be studied. Theoretically, these properties are presumed to improve after the heat treatment as the crystallinity, and the grain size of the film has increased due to the diminishing of oxygen vacancies. Thus, the greater surface-to-volume ratio, the better stoichiometry and higher level of crystallinity compared to bulk materials make nanocluster-based devices very promising for the mentioned application.

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Section: Zno Nanoclustermentioning

confidence: 89%

Effect of Annealing on Metal-Oxide Nanocluster

Singh¹,

Rajkumari²

2019

Concepts of Semiconductor Photocatalysis

View full text Add to dashboard Cite

show abstract

“…2,3 This is mainly due to the elevated energy barrier formed at the junction interface with large band offsets and barrier height inhomogeneities. [7][8][9]19 Nonetheless, a number of efforts have been made towards the fabrication of ZnO-based heterojunctions, substituting p-type ZnO with p-type, SiC, 20 Si, 21 NiO, 22 CuI, 23 diamond, 24 GaN 25 and CuO. 26 The n-ZnO/p-Si heterojunction diodes are specially attractive, owing to the availability and quality of crystalline silicon, as well as the possibility of hybrid integration of ZnO based devices with high density silicon technology.…”

Section: Introductionmentioning

confidence: 99%