Photovoltaic Properties of Solid State Junctions of Layered Semiconductors

Bücher, E.

doi:10.1007/978-94-015-1301-2_1

Cited by 23 publications

(8 citation statements)

References 343 publications

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“…Gallium selenide (GaSe) is a layered semiconducting material, composed of four sublayers stacking in the sequence of Se-Ga-Ga-Se. The monolayer GaSe sheets have been successfully synthesized in experiment [19][20][21][22], which is widely used in optoelectronics [23,24], nonlinear optics [25], terahertz experiments [26], solar energy conversion [27], field-effect transistors (FETs) [21], and so on.…”

Section: Introductionmentioning

confidence: 99%

A new type-II lepidocrocite-type TiO2/GaSe heterostructure: Electronic and optical properties, bandgap engineering, interaction with ultrafast laser pulses

Zhao¹,

Zhang²,

Cheng³

2021

Preprint

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Recently, van der Waals heterostructure has attracted interest both theoretically and experimentally for their potential applications in photoelectronic devices, photovoltaic devices, plasmonic devices and photocatalysis. Inspired by this, we design a lepidocrocite-type TiO2/GaSe heterostructure. Via first-principles simulations, we show that such a heterostructure is a direct bandgap semiconductor with a strong and broad optical absorption, ranging from visible light to UV region, exhibiting its potential application in photoelectronic and photovoltaic devices. With the planaraveraged electron density difference and Bader charge analysis, the heterostructure shows a strong capacity of enhancing the charge redistribution especially at the interface, prolonging the lifetime of excitons, and hence improving photocatalytic performance. By applying biaxial strain and interlayer coupling, the heterostructure exhibits a direct-indirect bandgap transition and shows a potential for mechanical sensors due to the smooth and linear variation of bandgaps. Furthermore, our result indicates that a lower interlayer distance leads to a stronger charge redistribution. The calculation of irradiating ultrafast on the heterostructure further reveals a semiconductor-metal transition for the heterostructure. Moreover, we find an enhanced induced plasmonic current in the heterostructure under both x-polarized and z-polarized laser, which is beneficial to plasmonic devices designs. Our research provides valuable insight in applying the lepidocrocite-type TiO2/GaSe heterostructure in photoelectronic, photovoltaic, photocatalytic, mechanical sensing and plasmonic realms.

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Section: Introductionmentioning

confidence: 99%

A new type-II lepidocrocite-type TiO2/GaSe heterostructure: Electronic and optical properties, bandgap engineering, interaction with ultrafast laser pulses

Zhao¹,

Zhang²,

Cheng³

2021

Preprint

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“…The transition metal dichalcogenides belong to the class of layered inorganic semiconductors with a chemical formula MX 2 , where M stands for a transition metal and X -for Se, S or Te [10,11]. Single crystals of TMDs are formed by stacks of X-M-X layers.…”

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confidence: 99%

“…The bonding anisotropy defines the unique morphology of these crystals as thin, flexible and easy-to-cleave platelets with atomically smooth (a,b)-facets. The electronic properties of TMDs vary from semiconducting (e.g., WSe 2 ) to superconducting (e.g., NbSe 2 ) [10,11]. The semiconducting TMDs are considered to be promising materials for solar cells, photoelectrochemical cells and p-n-junctions [12,13,14].…”

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confidence: 99%

High-mobility field-effect transistors based on transition metal dichalcogenides

Podzorov

Gershenson

Kloc³

et al. 2004

Applied Physics Letters

Self Cite

542

410

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We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm 2 /Vs for the p-type conductivity in the WSe 2 -based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.In modern electronics, the requirements to field-effect transistors are stringent and often contradictory: e.g., for many applications, a combination of high charge carrier mobility (µ) and mechanical flexibility is desirable. Neither of the developed FETs satisfies these requirements. For example, the process of fabrication of silicon FETs with a relatively high µ ≤ 500 cm 2 /Vs [1,2] is incompatible with flexible substrates. The organic-based FETs, that provide basis for flexible electronics [3,4,5], are notoriously known for their low µ. Although several

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“…6 shows the variation of (ahm) 2 versus hm for annealed films. The graph gave the direct band gap values, obtained by extrapolating the linear line on hm-axis is 1.74 eV and very close to the characteristic direct band gap value (1.78 eV) for single crystal MoS 2 [47].…”

Section: Optical Characterizationmentioning

confidence: 91%

Chemical bath deposition of MoS2 thin film using ammonium tetrathiomolybdate as a single source for molybdenum and sulphur

Roy

Srivastava

2006

Thin Solid Films

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Photovoltaic Properties of Solid State Junctions of Layered Semiconductors

Cited by 23 publications

References 343 publications

A new type-II lepidocrocite-type TiO2/GaSe heterostructure: Electronic and optical properties, bandgap engineering, interaction with ultrafast laser pulses

A new type-II lepidocrocite-type TiO2/GaSe heterostructure: Electronic and optical properties, bandgap engineering, interaction with ultrafast laser pulses

High-mobility field-effect transistors based on transition metal dichalcogenides

Chemical bath deposition of MoS2 thin film using ammonium tetrathiomolybdate as a single source for molybdenum and sulphur

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