Photovoltaics with piezoelectric core-shell nanowires

Boxberg, Fredrik; Sondergard, Niels; Xu, Hongqi; Wallentin, Jesper; Jin, Aizi; Trygg, Erik; Borgström, Magnus T.

doi:10.1063/1.3666457

Cited by 6 publications

(6 citation statements)

References 4 publications

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“…A higher-bandgap shell can be used for surface passivation or to confine carriers to the NW core. Recently, it has also been proposed that the piezoelectric field in strained core-shell structures could be used for photovoltaics [9], but only a few systematic growth studies of core-shell NWs have been presented [10,11]. We have investigated the growth of strained InP shells on InAsP cores.…”

Section: Introductionmentioning

confidence: 98%

Growth of doped InAsyP1−y nanowires with InP shells

Wallentin

Messing

Trygg

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 98%

Growth of doped InAsyP1−y nanowires with InP shells

Wallentin

Messing

Trygg

et al. 2011

Journal of Crystal Growth

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“…The strategy of using core/shell architecture not only allows the efficient use of intrinsic material properties from individual components, but also improves the charge carrier collection favored by radial geometry where electrons and holes are spatially confined in different conducting channels of type-II heterostructures, which leads to reduced recombination losses. [6][7][8][9][10] These core/shell nanowire features were further proven advantageous in a UV/Visible photodetector integrated on a lateral structure composed of a carbon fiber/ZnO/CdS double shell microwire 11 and, more recently, in an optical-fiber-nanowire hybrid structure. 12 The promising attributes of core/shell nanowires could be further augmented in three dimensional arrays where photoabsorption was enhanced by the trapping and re-scattering of incident photons.…”

mentioning

confidence: 99%

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

et al. 2015

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A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

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“…2 In addition, the electrical properties of semiconductors are often dynamically modified by the electrical field, temperature, illumination, and strain, leading to the development of a wide range of semiconductor devices including transistors, 3,4 photodetectors, 5À8 and piezodevices. 9,10 However, impurity doping is an irreversible process, while dynamical control is always carried out in a volatile manner. Therefore, reversible and nonvolatile tuning of the electrical properties of semiconductors will be a breakthrough in semiconductor device technology.…”

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confidence: 99%

Controlling Semiconducting and Insulating States of SnO₂ Reversibly by Stress and Voltage

2012

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By applying mechanical stress (by bending a flexible substrate) and an appropriate voltage, the conductance of a single-crystal SnO(2) microrod on a flexible substrate can be tuned in a reversible and nonvolatile manner. The creation and elimination of lattice defects controlled by strain and electrical healing is the origin of this novel transition. A SnO(2) microrod changes continually from its normal semiconducting state to an insulating state by bending the flexible substrate. The insulating state is maintained even after straightening the substrate. Interestingly, by applying an appropriate voltage, the defects are electrically healed and the insulating state reverts to the original semiconducting state. The structural changes in the SnO(2) microrod observed in the Raman spectra are consistent with the nonvolatile property of the transport. This flexible SnO(2) device with the reversible and nonvolatile modification of electrical properties is expected to lead to a better understanding of the mechanism of defect creation and elimination and has potential application in novel flexible strain sensors and switches.

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Photovoltaics with piezoelectric core-shell nanowires

Cited by 6 publications

References 4 publications

Growth of doped InAsyP1−y nanowires with InP shells

Growth of doped InAsyP1−y nanowires with InP shells

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Controlling Semiconducting and Insulating States of SnO₂ Reversibly by Stress and Voltage

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Photovoltaics with piezoelectric core-shell nanowires

Cited by 6 publications

References 4 publications

Growth of doped InAsyP1−y nanowires with InP shells

Growth of doped InAsyP1−y nanowires with InP shells

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Controlling Semiconducting and Insulating States of SnO2 Reversibly by Stress and Voltage

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Controlling Semiconducting and Insulating States of SnO₂ Reversibly by Stress and Voltage