Growth of doped InAsyP1−y nanowires with InP shells

Wallentin, Jesper; Messing, Maria E.; Trygg, Erik; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T.

doi:10.1016/j.jcrysgro.2011.07.002

Cited by 28 publications

(33 citation statements)

References 23 publications

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“…26 The {112}-oriented side facets are rougher than the smoother {1100}-oriented side facets increasing the probability of nucleation on the side facets and hence promoting lateral growth. 32 The axial interface between the GaAs and the InAs part is sharp when the GaAs part exhibits both (II) ZB ( Figure 3) and (IV) WZ (Figure 4) crystal structure. The presence of defects, such as dislocations, at the GaAsÀInAs interface is rather challenging to determine from high-resolution TEM images since the nanowires are reasonably thick with significant overgrowth.…”

Section: Introductionmentioning

confidence: 98%

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

et al. 2011

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One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.

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Section: Introductionmentioning

confidence: 98%

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

et al. 2011

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“…It has also been demonstrated that radial growth can be tuned to be selective to certain nanowire facets. [18][19][20] Controlling the crystal structure of different segments of the nanowire, and thereby, changing the surface energies of the segments formed along the axis would provide ideal templates for studying selective radial growth. In a number of studies it has been observed that the rate of radial growth strongly depends on the crystal phase of the nanowires, 17 attributed to their different surface energies.…”

Section: Introductionmentioning

confidence: 99%

Selective GaSb radial growth on crystal phase engineered InAs nanowires

et al. 2015

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In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy. We find that the radial growth rate of GaSb is determined by the crystal phase of InAs, and that growth is suppressed on InAs segments with a pure wurtzite crystal phase. The morphology and the thickness of the grown shell can be tuned with full control by the growth conditions. We demonstrate that multiple distinct core-shell segments can be designed and realized with precise control over their length and axial position. Electrical measurements confirm that suppression of shell growth is possible on segments with wurtzite structures. This growth method enables new functionalities in structures formed by using bottom-up techniques, with complexity beyond that attainable by using top-down techniques.

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“…The n-type and intrinsic have different crystal structures, 19,20 which has shown to affect diffusion length. 21 Note that the two n-segments had the same growth rate.…”

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Doping profile of InP nanowires directly imaged by photoemission electron microscopy

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et al. 2011

Applied Physics Letters

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InP nanowires (NWs) with differently doped segments were studied with nanoscale resolution using synchrotron based photoemission electron microscopy. We clearly resolved axially stacked n-type and undoped segments of the NWs without the need of additional processing or contacting. The lengths and relative doping levels of different NW segments as well as space charge regions were determined indicating memory effects of sulfur during growth. The surface chemistry of the nanowires was monitored simultaneously, showing that in the present case, the doping contrast was independent of the presence or absence of a native oxide.

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Growth of doped InAsyP1−y nanowires with InP shells

Cited by 28 publications

References 23 publications

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

Selective GaSb radial growth on crystal phase engineered InAs nanowires

Doping profile of InP nanowires directly imaged by photoemission electron microscopy

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