Physical and electrical properties of sputtered Ru<sub>2</sub>Si<sub>3</sub>/Si structures

Jelenković, Emil V.; Tong, Kin‐Fai; Cheung, W.Y.; Wong, S. P.

doi:10.1088/0268-1242/18/6/311

Cited by 20 publications

(14 citation statements)

References 17 publications

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“…There is also an indication from Raman spectrum of the formation of Ru 2 Si 3 as evidenced by the appearance of a peak immediately left of 300 cm -1 position [16]. annealed at 700 C…”

Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 91%

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali

Theron

Auret

et al. 2014

Journal of Nuclear Materials

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A thin film of ruthenium(Ru) was deposited on n-type 4H-SiC and 6H-SiC by electron beam deposition technique so as to study interface reaction of ruthenium with silicon carbide at various annealing temperatures, and in two annealing environments namely vacuum and air. The Ru-4H-SiC and Ru-6H-SiC films were both annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C, and the second set of samples were also annealed in air for temperatures ranging from 100 o C to 600 o C. After each annealing temperature, the films were analysed by Rutherford Backscattering spectrometry (RBS). Raman analysis and x-ray diffraction analysis were also used to analyse some of the samples. RBS analysis of 4H-SiC annealed in a vacuum showed evidence of formation of ruthenium silicide (Ru 2 Si 3 ) and diffusion of Ru into SiC starting from annealing temperature of 700 o C going upwards. In the case of Ru-6H-SiC annealed in a vacuum, RBS analysis showed formation of Ru 2 Si 3 at 600 o C, in addition to the diffusion of Ru into SiC at 800 o C . Raman analysis of the Ru-4H-SiC and Ru-6H-SiC samples that were annealed in a vacuum at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . As for the samples annealed in air ruthenium oxidation started at a temperature of 400 o C and diffusion of Ru into SiC commenced at temperatures of 500 o C for both Ru-4H-SiC and Ru-6H-SiC. X-ray diffraction analysis of samples annealed in air at 600 o C showed evidence of formation of ruthenium silicide in both 4H and 6H-SiC but this was not corroborated by RBS analysis.

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“…There is also an indication from Raman spectrum of the formation of Ru 2 Si 3 as evidenced by the appearance of a peak immediately left of 300 cm -1 position [16]. annealed at 700 C…”

Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 91%

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali

Theron

Auret

et al. 2014

Journal of Nuclear Materials

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“…The formation of Ru 2 Si 3 at temperatures of 800 o C cannot be the cause on its own for the worsening of the performance of the Schottky diode as the silicide is semiconducting, and has a barrier height close to that of Ru. The SBH of Ru 2 Si 3 on silicon (which one can conjecture to be close to that on SiC) of 0.76 eV [22] is very close to the SBH of Ru on SiC. It is the carbon released during the reaction process that may be the cause of poor performance of the diode.…”

Section: Resultsmentioning

confidence: 55%

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

et al. 2014

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Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonalsilicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru 2 Si 3 ) at 800 o C,while diffusion of Ru into 6H-SiC commenced at 800 o C . Raman analysis of the thin films annealed at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . At this annealing temperature the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic , thereby rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface.

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“…15 Furthermore, Ru 2 Si 3 is semiconducting and has a barrier height close to that of Ru on SiC. The SBH of Ru 2 Si 3 on silicon (which one can conjecture to be close to that on SiC) of 0.76 eV 16 is very close to the SBH of Ru on SiC.…”

Section: Where V I Is the Voltage Intercept Andmentioning

confidence: 67%

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

et al. 2015

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Abstract. Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400 • C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800 • C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance-voltage characteristics and excellent forward current-voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium-silicon-carbide interface, up to an annealing temperature of 800 • C.

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Physical and electrical properties of sputtered Ru₂Si₃/Si structures

Cited by 20 publications

References 17 publications

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

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Physical and electrical properties of sputtered Ru2Si3/Si structures

Cited by 20 publications

References 17 publications

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

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Physical and electrical properties of sputtered Ru₂Si₃/Si structures