Physical/electromagnetic pHEMT modeling

Cidronali, Alessandro; Leuzzi, G.; Manes, G.; Giannini, F.

doi:10.1109/tmtt.2003.808580

Cited by 27 publications

(23 citation statements)

References 27 publications

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“…Goasguen et al [1] tried a full wave method for device modeling and made some achievements. Robin et al [2] used this method to model the device structure Imtiaz and El-Ghazaly [3], and Cidronali et al [4] showed some reasonable trends of this method. However, this method encounters many difficulties, since the imperfections of the material and process are not controllable, and current numeric processing technique cannot fully describe the physical mechanism inside the channel.…”

Section: Introductionmentioning

confidence: 99%

An Accurately Scalable Small-Signal Model for Millimeter-Wave Hemts Based on Electromagnetic Simulation

Wang¹,

Wang²,

Yu³

et al. 2014

PIER M

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Abstract-By using some special passive structures and correction of boundary conditions a novel method to improve the electro-magnetic simulation accuracy is proposed. With this method many substrate parameters, such as thickness, loss, dielectric constant, loss tangent, sheet resistance, square capacitance and conductivity of the metal, can be described more accurately, and many high frequency effects caused by skin effects, parasitic effects, coupling between microstrip lines and fluctuation from the sheet resistance, etc. can also be simulated more precisely. An accurately scalable small-signal model for millimeter wave HEMTs is implemented and presented. Combined with distributed modeling, pulsed IV and S parameter measurements, this model can be made scalable freely. The measurements agree with simulated results very well, which also shows that this method applied to the scalable small signal model has a good consistency and accuracy.

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Section: Introductionmentioning

confidence: 99%

An Accurately Scalable Small-Signal Model for Millimeter-Wave Hemts Based on Electromagnetic Simulation

Wang¹,

Wang²,

Yu³

et al. 2014

PIER M

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“…[1]- [2]. Among existing FET modeling techniques, the full-wave modeling approach can be considered as the most reliable but is computationally expensive in terms of CPU time and memory [3]- [5]. On the other side, circuit equivalent models are fast but cannot accurately integrate EM effects.…”

Section: Introductionmentioning

confidence: 99%

Efficient CAD Tool for Noise Modeling of RF/Microwave Field Effect Transistors

Asadi¹

2013

Wave Propagation Theories and Applications

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“…Furthermore, to keep low-noise amplification over a wide frequency band, the transistor noise resistance R n must be substantially reduced to make the system insensitive to impedance matching [1]. Since this can be realized through large gate-width devices, the noise behavior of such particular devices at millimeter-wave frequencies should be efficiently modeled [2][3][4]. Targeting this class of FETs is also due to the fact that at mm-wave frequencies, the gate width to wavelength ratio is higher than 10 or 20% favoring large-gate-width transistors [5].…”

Section: Introductionmentioning

confidence: 99%

Advanced CAD tool for noise modeling of RF/microwave field effect transistors with large gate widths

Asadi

Yagoub

2011

Analog Integr Circ Sig Process

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In the millimeter-wave frequency range, electromagnetic (EM) effects can significantly influence a device behavior. As the core of modern communication systems, active devices such as field effect transistors (FETs) require up-to-date models to accurately integrate such effects, especially in terms of noise performance since most of communication systems operate in noisy environments. Furthermore, to keep low-noise amplification over a wide frequency band, the transistor noise resistance R n must be substantially reduced to make the system insensitive to impedance matching. Since this can be realized through large gate-width devices, a novel large gate-width FET noise model is proposed which efficiently integrates EM wave propagation effects, one of the most important EM effects in mm-wave frequencies.

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Physical/electromagnetic pHEMT modeling

Cited by 27 publications

References 27 publications

An Accurately Scalable Small-Signal Model for Millimeter-Wave Hemts Based on Electromagnetic Simulation

An Accurately Scalable Small-Signal Model for Millimeter-Wave Hemts Based on Electromagnetic Simulation

Efficient CAD Tool for Noise Modeling of RF/Microwave Field Effect Transistors

Advanced CAD tool for noise modeling of RF/microwave field effect transistors with large gate widths

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