Physical Limitations on Frequency and Power Parameters of Transistors

Science and research policy at the end of Moore’s law

“…Building on Bell Labs' core theoretical and technological advancements, subsequent contributions to the art of semiconductor manufacturing came from both large, established companies and small, young firms, which recent research indicates uniquely benefited from access to Bell Labs' technology made possible by the consent decree 5 . By the close of the 1950s, even as semiconductor shipments averaged annual growth rates of over 50%, some researchers began to project limits to progress in BJT transistors and their applications, at best two orders of magnitude away [6][7][8][9] . Many of these early warnings rested on erroneous assumptions about limits to transistor feature size, but semiconductor electronics faced pressing reliability challenges at the circuit level.…”

Field Plate Devices for RF Power Applications

“…Improving device performance by improving the semiconductor physical properties is one of the method that can be followed in order to fabricate better devices. As proposed by Johnson (Johnson, 1965) the power -frequency product depends from the carrier saturation velocity and the semiconductor critical electric field. This means that once a semiconductor material is chosen the device performance will not improve behind certain values, unless material properties improves.…”

Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

“…The trade off suggests that there is an optimal doping value that would be necessary to maximize the f t BV CEO product. As shown in [31,32], there is a tradeoff between f t and BV CEO in the bipolar transistor design. In our simulation we analyzed the tradeoff and the f t BV CEO product.…”