Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

Ye, Cong; Wu, Jiaji; He, Gang; Zhang, Jieqiong; Deng, Tengfei; He, Ping; Wang, Hao

doi:10.1016/j.jmst.2015.10.018

Cited by 109 publications

(60 citation statements)

References 83 publications

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“…Materials of RS medium play a decisive role in the switching process, which has a direct and significant influence on the performance of RRAM devices such as ON/OFF ratio and device stability. On the other hand, electrode materials of RRAM devices more affect switching modes of RRAM devices, which should also be under further investigation [13,14,18,48,63,64].…”

Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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“…RRAM consists of an insulating layer (I) sandwiched between the two metal (M) electrodes [11,12]. RRAM relies on the formation and the rupture of conductive filaments corresponding to LRS and HRS, respectively, in the insulator between two electrodes [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

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In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.

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“…There are memristors with different resistive switching mechanisms: phase change memory, [5] electrochemical metallization, [6] valence change memory, [7] Fowler-Nordheim tunneling, [8] redox reactions in organic polymers, [9] etc. [10] A part of them is based on the filamentary mechanism: formation or destruction of filament at bias voltage leads the memristor to a high resistive state (HRS) or low resistive state (LRS), respectively.…”

Section: Introductionmentioning

confidence: 99%

Spike‐Timing‐Dependent and Spike‐Shape‐Independent Plasticities with Dopamine‐Like Modulation in Nanocomposite Memristive Synapses

Nikiruy

Surazhevsky

Демин

et al. 2020

Physica Status Solidi (a)

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In hardware neuromorphic systems (NSs), memristors are used as synaptic connections. In such systems, spike‐timing‐dependent plasticity (STDP) is a promising local learning rule. Herein, STDP is studied in a system composed of a pair of hardware or software neurons connected by a (CoFeB)x(LiNbO3)100−x nanocomposite‐based memristor. The dopamine‐like modulation of memristor‐based STDP is implemented simply by the change in the polarity of spikes generated by artificial neurons operating in the inhibitory or excitatory mode. This modulation method is shown to be compatible with hardware neurons, different spike shapes, and is used in spiking NSs with bioinspired dopamine‐like reinforcement learning.

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Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

Cited by 109 publications

References 83 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Spike‐Timing‐Dependent and Spike‐Shape‐Independent Plasticities with Dopamine‐Like Modulation in Nanocomposite Memristive Synapses

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