Physical Mechanisms Inducing Electron Single-Event Upset

Abstract

With the increase of sensitivity of devices to singleevent upsets (SEUs), the possibility to trigger an upset with incident electrons has been recently raised. All the mechanisms susceptible to trigger the SEUs are investigated in detail. New measurements performed on the field programmable gate array static random access memory based from Xilinx Spartan 6 at 1 MeV seem to confirm two SEU regions with the transition located around 10 MeV.

New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

“…4) Transitional Part: Some articles show that the Coulomb elastic scattering process can contribute mainly to the device sensitivity in this region of energy [10], [11], [26]. Thus, when the Coulomb elastic contribution appears and makes the transition between ionization and nuclear contributions, it is possible to deduce information about the critical energy and the sensitive volume.…”

“…The first measurements (in terms of energy) of SEU under electrons are particularly interesting because these data establish the critical energy of the device. In recent articles, we have discussed the sensitivity of the devices to electrons [10], [11]. Different physical processes are involved within the sensitivity to electrons (e-/nucleus Coulomb scattering, electronuclear processes, inelastic e-/e-scattering).…”

Role of Electron-Induced Coulomb Interactions to the Total SEU Rate During Earth and JUICE Missions

“…2. As explained in [7], [8] for other devices, the lower energy part of the curve (Fig. 2) is dominated by the direct ionization process.…”

Surface Ionizing Dose for Space Applications Estimated With Low Energy Spectra Going Down to Hundreds of Electronvolt

“…It allows the transport of electrons down to a few eV. Some improvements have also been brought to allow the transport of protons down to ~10 keV [32].…”