Physical Model for Reset State of Ta₂O₅/TiO₂-Stacked Resistance Random Access Memory

Abstract

We investigated the conduction mechanism of a Ta2O5/TiO2-stacked resistance random access memory (ReRAM) device and found that its highly resistive state can be attributed to tunnel barriers induced in the filament, since single-electron tunneling phenomena was observed in the current–voltage characteristics at low temperatures and the resistance depended only slightly on temperature. We also found that the largest tunnel barrier, whose resistance is more than 1000 times larger than the second largest one, is located at the interface between the Ta2O5 layer and TiO2 layer and that variation in the resistance was caused by variation in the tunnel barrier width.

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal–Insulator Electronics

“…It is clearly evident that all devices with thin insulators exhibit a logarithmic growth in the low-bias direct regime (observable only for sufficiently thin barrier), while a distinct transition from logarithmic growth to the linear decay is seen in the high-bias FN tunneling regime. As a result, one can concluded from FN plots and fitted theoretical results (Figures 4a,b) that the transport mechanism is due primarily to the quantum mechanical tunneling, instead of the defect-related conduction observed in conventional TiO 2 and Ta 2 O 5 films, 57 thanks to the extremely low defect density and surface roughness of our atomically flat ultrathin TiO 2 and Ta 2 O 5 converted from 2D TMD crystals.…”

Hybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlOx/indium tin oxide flexible device

“…esistive random access memory (RRAM) has been reported as a competitive candidate for nextgeneration nonvolatile memory because of its high operation speed, low power consumption, simple device structure, and excellent scalability. 1,2) There are many resistive switching materials such as perovskite, 3) binary transition metal oxides, [4][5][6] carbon-based materials, 7) and organic polymers 8) being investigated. Among these materials, aluminum oxide (AlO x ) is proposed to be one of the most promising materials owing to its compatibility with conventional complementary-metal-oxide-semiconductor (CMOS) technology.…”

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

“…The one consisting of metallic atoms is called conductive bridge RAM (CBRAM), and the other consisting of oxygen vacancies is called oxide-based RAM (OxRAM). [15][16][17][18] ReRAMs with a Hf-oxide dielectric layer have been studied extensively. [19][20][21][22] It is reported that most of the conductive filaments of ReRAM with the HfO 2 layer consist of oxygen vacancies, and the diffusion of oxygen vacancies (i.e., oxygen ions) occurs between the oxygen-rich and oxygen-poor regions upon voltage application.…”