Physical Modeling of SiC Power Diodes with Empirical Approximation

Abstract

This article presents the development of a model for SiC power diodes based on the physics of the semiconductor. The model is able to simulate the behavior of the dynamics of the charges in the N-region based on the stored charge inside the SiC power diode, depending on the working regime of the device (turn-on, on-state, and turn-off). The optimal individual calculation of the ambipolar diffusion length for every phase of commutation allows for solving the ambipolar diffusion equation (ADE) using a very simple approach. By means of this methodology development a set of differential equations that models the main physical phenomena associated with the semiconductor power device are obtained. The model is developed in Pspice with acceptable simulation times and without convergence problems during its implementation.

Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

“…E=− ∂  ∂ x (11) where the space charge is defined by =q   p−n (12) Conservation Equations q ∂ p ∂t + ∂ J p ∂ t =−q U (13) −q ∂ n ∂t…”

“…Under this assumption, (12) yields p−n+ Γ=0 In LLI, i.e., the standard case in an P-region, electrons are the minority carriers, which means…”

“…The analysis is based on the classical semiconductor device equations (10)(11)(12)(13)(14)(15)(16)(17)(18) […”

Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

“…temperatures ( [1] , [11] , [12] ) was based on the minimization of the error between simulations and measurements of the static characteristics for both the Hefner model and the new established model. The parameters that describe the MOSFET channel have a weak influence on the static characteristics, whereas other parameters, such as ND and WB have a very weak influence.…”

The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case

“…This is done inside a switching cell circuit where the unique wiring parasitic inductance L D is taken into account. Since these devices are tested in the same switching cell with the same current, I F , voltage, V R , and inductor, L D , the same value of current slope, di/dt, is measured for these diodes at beginning of their turn-off transient behavior [15].…”