Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance

Amir, Faisal; Farrington, N.; Tauqeer, Tauseef; Missous, M.

doi:10.1109/asdam.2008.4743356

Cited by 8 publications

(5 citation statements)

References 2 publications

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“…The double Gunn effect is then implemented in these standard models to simulate the performance. These standard models have already shown satisfactory agreement with the commercially developed Gunn diode device [13]. These models, however, do not describe the double Gunn effect, which has only been shown in EMC simulation.…”

Section: Physical Modelsmentioning

confidence: 98%

Power-frequency performance of step-graded double Gunn diodes

Butts

El-Ghazaly

2023

J. Phys.: Conf. Ser.

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Simulations of conventional Gunn diodes containing the double Gunn effect have shown a significant increase in oscillation frequency and frequency range. However, conventional Gunn diodes suffer from higher phase noise, lower efficiency, and reduced temperature stability due to the lack of a hot electron injector. A study on the performance of a Double Gunn diode with a graded gap injector is presented. The second region of negative differential mobility is gradually introduced in several temperature-dependent mobility models, which are implemented in an energy balance simulation. Devices with transit lengths of 0.7μm, 1.1μm, and 1.65μm are simulated. All devices experience an increase in oscillation frequency with increasing intensities of the double Gunn effect. The frequency range doubles at significant intensities of the effect in the devices with transit lengths of 0.7μm and 1.65μm.

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Section: Physical Modelsmentioning

confidence: 98%

Power-frequency performance of step-graded double Gunn diodes

Butts

El-Ghazaly

2023

J. Phys.: Conf. Ser.

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“…where n 1 = electron density in Γ valley, n 2 = electron density in L valley. Above the high field, E H , most electrons reside in the L valley, and the device behaves as a passive resistance (of greater magnitude) once again [15,16].…”

Section: State Of the Art Of The Gunn Diodementioning

confidence: 99%

“…Above the high field, E H , most electrons reside in the L valley, and the device behaves as a passive resistance (of greater magnitude) once again .…”

Section: State Of the Art Of The Gunn Diodementioning

confidence: 99%

The study of packaging miniaturization effect on the characteristics of an active planar circuit by using the iterative method

Ziar

Zaabat

Baudrand³

2012

Int J Numerical Modelling

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The aim of this manuscript is to present the application of an iterative method based on the concept of transverse wave to analyze the packaging (passive element and substrate) miniaturization effect on the characteristics of an active planar circuit structure. This approach consists in the substitution of the active element by one auxiliary source, and connection is assumed by microstrip line as passive element deposited on one unique substrate. An implementation of the presented theory is shown by extraction of S-parameters and impedances of the active circuit using MATLAB program codes.

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“…Advances in Gunn diode structure using various methods to reduce the dead zone have been investigated through the years. For example, a GaAs-based Gunn diode with a step-graded gap launcher has long been commercialised and used succesfully [8] due to its high efficiency and output power, temperature stability, as well as low output noise [9]. A step-graded gap launcher followed by a thin δ-doped layer improved the Gunn diode's performance by eliminating the dead zone in the transit region of the device [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Analysis of notch-δ-doped GaAs-based Gunn diodes

Akhbar¹,

Ong²

2022

J. Phys. D: Appl. Phys.

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The performances of GaAs-based Gunn diodes with a notch-δ-doped structure have been studied in this work. The δ-doped effect has been analysed using Monte Carlo modelling in terms of temporal evolution of current density, electric field profile, electron energy, mean velocity, and occupancy in Γ and higher valleys. The presence of a δ-doped layer after the notch caused a significant increase in the harmonic current amplitude of the device, where the growth of high field domain can be attributed to a slow electron track due to the well-known Gunn effect and an additional fast electron track which appears over a short time window when the domain is reaching the anode. An optimised GaAs notch-δ-doped structure with 700 nm device length including 100 nm notch and 5 nm δ-doped layer can generate signals at fundamental frequency of 262 GHz with a current harmonic amplitude of 29.4×107 A/m2, which is almost twice of that without δ-doped layer. Its second and third harmonic signals are found substantial reaching into the THz range of 512 GHz and 769 GHz.

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Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance

Cited by 8 publications

References 2 publications

Power-frequency performance of step-graded double Gunn diodes

Power-frequency performance of step-graded double Gunn diodes

The study of packaging miniaturization effect on the characteristics of an active planar circuit by using the iterative method

Analysis of notch-δ-doped GaAs-based Gunn diodes

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