Physical models for heterostructure FET simulation

Abstract

Field effect transistors (FET) based on heterostructures between III‐V binary and ternary compounds have been demonstrated as outstanding semiconductor devices for microwave applications. This paper will present a critical discussion of the physical models that are used to study the prototype of heterostructure devices, that is the High Electron Mobility Transistor (HEMT). The main technological features involved in the fabrication of HEMT are outlined and their incorporation into theoretical models discussed.