Physical origins of nonlinearity in InP double heterojunction bipolar transistors

Abstract

Two tone inter-modulation distortion measurements were performed at 18 GHz to characterize the nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs). Two-dimensional hydrodynamic (HD) simulations were also performed, showing that the base push-out and charge accumulation effects are the dominant physical origins of nonlinearity for the Type-I DHBT at high current densities. Comparatively, the Type-I/II DHBT exhibits no such effects. Hence, we conclude that DHBTs having a Type-I/II energy band alignment will have an inherent linearity advantage compared to DHBTs with the Type-I energy band alignment.

Scanning Probe Characterization of Heterostructured Colloidal Nanomaterials

“…Material junctions form the basis of modern solid-state technology by controlling current flow − and are key components in digital electronics, electronic switches, signal amplification and processing, − sensing, light-emitting diodes, − lasers, , and photovoltaics. − A heterojunction arises when dissimilar semiconductors come into contact and form an abrupt interface. The junction physics are controlled by the band gap, electron affinity, and chemical potential or Fermi level of each material as well as how the energy levels or bands align across the material interface (which can be influenced by dipoles or interfacial defects/alloying). , Over the years, engineering the material interface and film characteristics of thin-film heterojunctions has resulted in the development of many advanced devices.…”