Physical origins of ON-OFF switching in ReRAM via VO based conducting channels

Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer

“…This trend is the same as other binary-oxide-based ReRAMs such as TiO 2 -and HfO 2 -ReRAMs. 18,28) Furthermore, we mention that V O diffusion barrier can be changed upon its charge state and that the activation barrier for isolated V O 2þ is $1 eV, 29) which means that the V O migration can be triggered by thermal energy caused by joule heating. 3(c)] and the other is composed of s-and p x -orbitals of Al atoms [Fig.…”