Physical properties of arsenic-doped tin oxide thin films

Electrical conductivity, Seebeck coefficient and optical properties of SnO2 film deposited on ITO by dip coating

“…These levels may result from ionized defects. The presence of two donor levels has been reported by Vishwakarma et al [21] for CVD films. The increase in conductivity of the samples with temperature is due to decrease in grain boundary concentration [22] and increase in ionized defects such as oxygen vacancies [23], which increase carrier concentration and mobility of the charge carriers [20].…”

Optical characterization of SnO2:F films by spectroscopic ellipsometry

“…SnO 2 has a tetragonal structure, similar to the rutile structure with the wide energy gap of E g = 3.6-4.0 eV and behaves as an n-type semiconductor [13][14][15]. Antimony (Sb), arsenic (As), phosphorus (P), indium (In), molybdenum (Mo), fluorine (F) and chlorine (Cl) have been selected as doping elements for SnO 2 films [16][17][18][19][20][21][22][23].…”

Transparent conducting Sb-doped SnO2 thin films grown by pulsed laser deposition

“…Many dopants, such as antimony (Sb) [7], arsenic (As) [8], phosphorus (P) [9], molybdenum (Mo) [10], fluorine (F) [11] and chlorine (Cl) [12], have been studied to improve the electrical and optical properties of SnO 2 thin films. Among these, F-or Sb-doped SnO 2 films are the most commonly used transparent conducting oxides (TCOs) in solar cells.…”