Physical properties of chemical bath deposited CdS thin films

Ximello-Quiebras, J.N.; Contreras‐Puente, G.; Aguilar‐Hernández, J.; Santana, Gregório Mateus; Reádigos, A. Arias-Carbajal

doi:10.1016/j.solmat.2004.01.023

Cited by 67 publications

(16 citation statements)

References 5 publications

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“…The as-deposited and annealed CdS films at low temperature (T < 623 K) exist in two crystalline phases: cubic (C) phase (zinc blende-type, JCPDS 06-0314) and hexagonal (H) phase (wurtize-type, JCPDS 10-0454), in line with the literature. 8,15,16,24,[32][33][34][35] Annealing leads to an overall improvement in the intensity of the peak heights, indicating that increasing annealing temperature increase the crystallinity of the film. By increasing the annealing temperature, the hexagonal phase becomes dominant and finally at T = 823 K the structure becomes 100% hexagonal phase.…”

Section: Resultsmentioning

confidence: 99%

“…7 Naturally, many different synthesis processes have been tried such as spray pyrolysis, 8,9 vacuum evaporation, 10 metal organic chemical vapor deposition, 11 and chemical bath deposition. 7,[12][13][14][15][16][17][18][19][20][21][22] Among these techniques, chemical bath deposition (CBD) is a low-cost and suitable technique to prepare high quality, well adhered film reproducibly. The deposition process is based on the slow release of sulfide ions via the controlled hydrolysis of thiourea [SC(NH 2 ) 2 ] in an alkaline medium in the presence of a Cd salt and a chelating agent such as NH 3 .…”

Section: Introductionmentioning

confidence: 99%

“…The deposition process is based on the slow release of sulfide ions via the controlled hydrolysis of thiourea [SC(NH 2 ) 2 ] in an alkaline medium in the presence of a Cd salt and a chelating agent such as NH 3 . 23 The very high resistivity of the asdeposited films, typically on the order of 10 6 -10 7 O-cm at room temperature, [13][14][15][16][17][18][19][20][21][22][23][24] has been attributed to lattice defects and dislocations, [25][26][27][28][29] and can be reduced by annealing the film. The physical and chemical properties of not only CdS films but also most of the binary metal chalcogenides of II-VI semiconductors obtained by CBD critically depend on preparative parameters such as the source and concentration of metal and chalgonide ions, pH of the deposition solution, deposition time and temperature, and gas phase process parameters such as temperature, gas partial pressure, and the time of annealing.…”

Section: Introductionmentioning

confidence: 99%

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The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

et al. 2010

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Cadmium sulfide (CdS) photocatalyst films were grown on glass by chemical bath deposition (pH 9.4, 70 C) and then annealed in nitrogen from 423 K to 823 K in steps of 100 K. The XRD crystallite size increases in a sigmoidal manner from 60 nm to 100 nm while the optical band gap energy decreases from 2.42 eV to 2.28 eV. This trend is paralleled by the decreasing Urbach energy, but only up to 623 K, where it increases again. This is the temperature where the Cd effectively surpasses the phase transformation from cubic to hexagonal, and the activation energy for electronic transport drops by a factor of nearly two.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

et al. 2010

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“…In order to prepare transparent and high resistivity CdS thin films with the good conformal coverage (Maeng et al, 2011). Ximello-Quiebras et al (2004), deposited CdS with time variation at constant temperature from an aqueous ammoniacal solution containing cadmium ion from cadmium chloride and thiourea reported hexagonal phase with a preferential (0 0 2) orientation, dark resistivity of 10 4 Ωcm and with band gap in the range of 2.4eV. (Demir and Gode, 2015) .…”

Section: Introductionmentioning

confidence: 99%

Nanocrystalline Cadmium sulfide (CdS) thin film synthesized at different dip times by chemical bath deposition technique

Ezekoye¹,

Ighodalo²,

Ezekoye³

et al. 2015

Int. J. Phys. Sci.

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Nanocrystalline Cadmium sulfide (CdS) thin films were prepared by chemical bath deposition technique on a glass substrates at a temperature of 80°C and at different deposition times with composition of cadmium chloride (CdCl 2 ), thiourea (CS (NH 2 ) 2 ), ammonia solution (NH 4 OH) and triethanolamine (TEA) solution. The characterization of thin films was carried out for the structural, morphological and optical properties using X-ray diffraction (XRD), Scanning electron microscope (SEM) and UV-VIS spectrophotometer. XRD studies show that the preferential orientation (002), analysis shows that the prepared samples have hexagonal crystal structure. Scanning electron microscopy (SEM) reveals small nanosized grains tied up in a fibrous-like porous structure uniformly distributed over the surface of the substrate for the CdS films. A UV-VIS optical spectroscopy study was carried out to determine the band gap of the nanocrystalline CdS thin films. The average band gap was found to be 2.25 eV, which is lower than the bulk value (2.4 eV). The increase in absorption coefficient with photon energy makes the deposited CdS thin film a suitable candidate for the fabrication of solar cells.

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“…Thus, one might assume that thin CdS films are an appealing host for photonic devices [1]. They have been used in a lot of applications including electronic and optoelectronic devices [2]. Thin films of n-type CdS are widely used as a window layer in heterojunction solar cells such as CdS/CdTe solar cells.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of N‐Type CDS Thin Films

Ikhmayies¹

2013

Characterization of Minerals, Metals, and Materials 2013

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Cadmium sulfide (CdS) in the form of thin films is an interesting material because it has a large variety of applications ranging from photovoltaic to luminescent devices. N-type CdS is usually used as a window layer in the heterojunction CdS/CdTe thin film solar cells. A review of the photoluminescence (PL) spectra of n-type CdS thin films prepared by different techniques was performed. The effects of different dopants and impurities and the effects of temperature and deposition parameters on the PL spectra were discussed. Annealing in different atmospheres causes the changes in material structure and phase change from cubic to hexagonal phase which can be detected through the variations in the PL spectra. CdCl 2 heat treatment improves the cystallinity of the films and enhances the exciton peaks and the green band in the PL spectra.

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Physical properties of chemical bath deposited CdS thin films

Cited by 67 publications

References 5 publications

The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

Nanocrystalline Cadmium sulfide (CdS) thin film synthesized at different dip times by chemical bath deposition technique

Photoluminescence of N‐Type CDS Thin Films

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