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Evidences of the passivation effect are given when thin films of CdS are deposited on GaSb crystalline substrates, using a bath chemical deposition method. The passivation process is studied through photoacoustic and photoluminescence experiments. The surface recombination velocity calculated from photoacoustic measurements decreases and the radiative recombination rate as measured from photoluminescence spectra increases when the nominal S/Cd ratio in the layer deposition solution increases. The influence of the CdS layer thickness on the surface passivation of GaSb is also studied.

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We present in this work a study of the growth kinetics and the optical properties of CdS thin films as processed by the Chemical Bath Deposition (CED) technique. For the deposition we used cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea in suitable proportions, the deposition was carried out on Suo2: F conducting glass. The growth kinetics is relativeIy fast when the quantity of thiourea is increased in the solution of deposition. Such films show an average transmittance of 90 % and a mean band gap energy of 2.36 eV. With this characteristics, the films can in principle be used like the window material in the CdS/CdTe solar cells.

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