Physical properties of highly crystalline CIS layer prepared using single phase electrodeposition and low temperature RTP annealing

Abstract

Physical properties of highly crystalline CIS layer prepared using single phase electrodeposition and low temperature RTP annealing.

Effect of the Electrodeposition Potential on the Physical Properties of Rapid Thermal Processing‐Annealed CuInSe2 Films

“…Thus, annealing is necessary to improve the film crystallinity. [ 24 ] In Figure , we give XRD patterns of CIS films fabricated at −0.85 V as deposited and after annealing at 250 °C for 15 min. XRD patterns of ITO are used for referencing.…”

“…In Figure we plot the M–S typical plot of the n‐type CIS film elaborated in 0.5 m Na 2 SO 4 electrolytes, at −0.75 V. In inset, we plot the versus E / V of the p‐type CIS film elaborated at −0.85 V for CIS film, which is not usually the case. [ 24 ]…”

“…In Figure 6 we plot the M-S typical plot of the n-type CIS film elaborated in 0.5 m Na 2 SO 4 electrolytes, at À0.75 V. In inset, we plot the 1 C 2 sc versus E/V of the p-type CIS film elaborated at À0.85 V for CIS film, which is not usually the case. [24] It is reported in the literature that depending on the composition, the CIS is of p-type semiconductor when the ratio Cu/In = 1 and is of n-type when the Cu/In < 1. Furthermore, Nȃdaždy et al [35] attributed this switching to deep levels in CIS due to the Cu-ion migration induced by the electric field during electrodeposition.…”

“…All films were annealed at optimized annealing temperature in argon atmosphere at 250 °C for 5 min with an IR RTP. [ 24 ]…”

“…All films were annealed at optimized annealing temperature in argon atmosphere at 250 °C for 5 min with an IR RTP. [24] Structural characterization of thin films was carried out using an X-ray diffractometer (Bruker D8 advance) in the 2θ range of 10°-80°. The full width at half maximum (FWHM), the phase composition, the Bragg angle, and the interplanar spacing (d) were estimated with X'Pert HighScore Plus program.…”