2011
DOI: 10.1134/s1063782611060030
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Physical properties of SnS thin films fabricated by hot wall deposition

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Cited by 32 publications
(23 citation statements)
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“…The literature reports obtaining SnS thin films with thickness 35 nm [4], however, to detect the size effect in the phonon spectra of SnS, according to our estimation, a thickness of no more than 4 nm is required, which corresponds to an eight-layer nanocrystal. Copyright of Canadian Journal of Physics is the property of Canadian Science Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission.…”
Section: Resultsmentioning
confidence: 94%
“…The literature reports obtaining SnS thin films with thickness 35 nm [4], however, to detect the size effect in the phonon spectra of SnS, according to our estimation, a thickness of no more than 4 nm is required, which corresponds to an eight-layer nanocrystal. Copyright of Canadian Journal of Physics is the property of Canadian Science Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission.…”
Section: Resultsmentioning
confidence: 94%
“…SnS films with the stoichiometric composition of 3.0-5.5 μm thickness were grown on pre-cleaned Corning 7059 glass substrates using a hot wall epitaxy method [2,3]. It was carried out in a sealed quartz tube at the pressure of 5×10 −4 Pa and the temperature of the tube walls of 550 °C.…”
Section: Methodsmentioning
confidence: 99%
“…It is promising for thermoelectric devices [2], and its varied direct gap of 1.07-1.27 eV [3] laying in the optimum range for solar photoconversion makes SnS extremely promising for the application as an absorption layer in a new generation of photovoltaic devices. Among the many methods of SnS films growth, the highly effective approach is a hot wall thermal evaporation that allows fabrication of SnS films with the stoichiometric composition under conditions close to the thermodynamic equilibrium [2,3].…”
Section: Introductionmentioning
confidence: 99%
“…Проведенное исследование показало, что предложенная модель роста пленок SnS при гидрохимическом осаждении хорошо согласу-ется с экспериментами и доказывает сложный агрегативный механизм фор-мирования твердой фазы из пересыщенного водного раствора. 4 -10 5 см -1 , и оптической ширине за-прещенной зоны, равной 1,1-1,5 эВ [1], используется в качестве поглоща-ющего слоя в тонкопленочных прео-бразователях солнечной энергии [1], а также в качестве фотопроводников, полупроводниковых датчиков, микро-батарей.…”
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