Physical properties of transparent perovskite oxides (Ba,La)SnO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>with high electrical mobility at room temperature

Kim, Hyung Joon; Kim, Useong; Kim, Tai Hoon; Kim, Jiyeon; Kim, Hoon Min; Jeon, Byeong‐Gyun; Lee, Woong‐Jhae; Mun, Hyo Sik; Hong, Ki‐Ha; Yu, Jaejun; Char, K.; Kim, Kee Hoon

doi:10.1103/physrevb.86.165205

Cited by 283 publications

(161 citation statements)

References 56 publications

Supporting

Mentioning

143

Contrasting

Order By: Relevance

“…The increase in apparent optical gap with La doping is possibly consistent with optical absorption spectra of BaSnO 3 and (Ba,La)SnO 3 obtained by Kim and co-workers, 12 do not show large gaps above the CBM, but instead show other bands within 3 eV of the CBM. These arise from the dimensional reduction, specifically the strongly reduced hopping along the k z , c-axis direction, which narrows the conduction bands.…”

supporting

confidence: 89%

“…5 This basic result was found in subsequent band structure calculations with various methods. [12][13][14][15][16][17][18][19][20][21][22] Large variation in the band gap between BaSnO 3 , SrSnO 3 , and CaSnO 3 , was found by Mizoguchi and co-workers, 13 and subsequently discussed in terms of strain. 15,17 The band structures with the TB-mBJ potential are shown in Fig.…”

mentioning

confidence: 93%

“…[4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] Importantly, recent studies of high mobility La doped BaSnO 3 transparent conducting films show transport properties that are still dominated by extrinsic defects, specifically dislocations. 12,18,19 The implication is that there remains considerable room for even better conductivity with improvements in film perfection. Recent studies suggested that n-type BaSnO 3 may have substantial tunability, e.g., in the band gap via alloying and strain, [14][15][16][17] but applications of strain tuning of BaSnO 3 have yet to be demonstrated.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Tuning optical properties of transparent conducting barium stannate by dimensional reduction

Zhang

Singh

2015

APL Materials

View full text Add to dashboard Cite

We report calculations of the electronic structure and optical properties of doped n-type perovskite BaSnO3 and layered perovskites. While doped BaSnO3 retains its transparency for energies below the valence to conduction band onset, the doped layered compounds exhibit below band edge optical conductivity due to transitions from the lowest conduction band. This gives absorption in the visible for Ba2SnO4. Thus it is important to minimize this phase in transparent conducting oxide (TCO) films. Ba3Sn2O7 and Ba4Sn3O10 have strong transitions only in the red and infrared, respectively. Thus there may be opportunities for using these as wavelength filtering TCO.

show abstract

supporting

confidence: 89%

mentioning

confidence: 93%

mentioning

confidence: 99%

See 1 more Smart Citation

Tuning optical properties of transparent conducting barium stannate by dimensional reduction

Zhang

Singh

2015

APL Materials

View full text Add to dashboard Cite

show abstract

“…Note that careful control of the p(O 2 ) is essential for achieving simultaneous increases in the structural and electrical properties, which can explain the further improvement in the RT μ e at the small expense of point defect generation by precise p(O 2 ) control Fig. 4 Comparison of the room temperature electron mobility vs. carrier concentration for our optimized LBSO films wet 0.5% H 2 -annealed at 950°C (red stars) and previously reported LBSO films, i.e., PLD-grown LBSO thin films on an STO substrate 11 (black squares), and on a single-crystal BSO substrate 16 (green circles), MBE-grown LBSO thin films on an STO substrate 13 (blue triangles, orange diamonds), and single-crystal LBSO 38 (pink hexagons)…”

Section: Resultsmentioning

confidence: 99%

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

Yoon

Son

2018

NPG Asia Mater

View full text Add to dashboard Cite

The scattering of charge carriers by line defects, i.e., threading dislocations (TDs), severely limits electron mobility in epitaxial semiconductor films grown on dissimilar substrates. The density of TDs needs to be decreased to further enhance electron mobility in lattice-mismatched epitaxial films and heterostructures for application in highperformance electronic devices. Here, we report a strategy for the post-treatment of epitaxial La-doped BaSnO 3 (LBSO) films by delicately controlling the oxygen partial pressure p(O 2 ), which achieved a significant increase in the room temperature (RT) electron mobility (μ e ) to μ e = 122 cm 2 V −1 s −1 at a carrier concentration of 1.1 × 10 20 cm. This mobility enhancement is mostly attributed to an oxygen vacancy-assisted recovery process that reduces the density of TDs by accelerating the movement of dislocations in ionic crystals under a p(O 2 )-controlled treatment despite an increase in the density of charged point defects. Our finding suggests that accurate control of the interactions between point defects and line defects can reduce dominant carrier scattering by charged dislocations in epitaxial oxide semiconductors that have dissimilar substrates. This method provides alternative approaches to achieving perovskite oxide heterostructures that have high RT μ e values.

show abstract

“…Owing to this behavior, Sn in II-IV perovskite A 2+ B 4+ O 3 structure can occupy both A-and B-sites, which results in a number of significant synthesis challenges along the route to novel Sn-based perovskite compounds that have recently generated a lot of interest in the functional materials community. SrSnO 3 and BaSnO 3 , with Sn 4+ residing on the B-site, have recently emerged as indium-free transparent conductors [6][7][8] and for oxide electronics due to their high room-temperature electron mobility and wide bandgap. [9][10][11][12][13][14] Mixed valence states may or may not be beneficial, depending on the intended application.…”

confidence: 99%

Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor

et al. 2016

View full text Add to dashboard Cite

PbTiO3-based ferroelectrics have impressive electroactive properties, originating from the Pb2+ 6s2 electron lone-pair, which cause large elastic distortion and electric polarization due to cooperative pseudo Jahn-Teller effect. Recently, tin-based perovskite oxide (SnTiO3) containing Sn2+ and a chemistry similar to that of the 6s2 lone-pair has been identified as a thermally stable, environmentally friendly substitute for PbTiO3-based ferroelectrics. However experimental attempts to stabilize Sn2+ on the A-site of perovskite ATiO3 have so far failed. In this work, we report on the growth of atomically smooth, epitaxial, and coherent Sn-alloyed SrTiO3 films on SrTiO3 (001) substrates using a hybrid molecular beam epitaxy approach. With increasing Sn concentration, the out-of-plane lattice parameter first increases in accordance with the Vegard’s law and then decreases for Sn(Sr+Ti+Sn) at. % ratio > 0.1 due to the incorporation of Sn2+ at the A-site. Using a combination of high-resolution X-ray photoelectron spectroscopy and density functional calculations, we show that while majority of Sn is on the B-site, there is a quantitatively unknown fraction of Sn being consistent with the A-site occupancy making SrTiO3 polar. A relaxor-like ferroelectric local distortion with monoclinic symmetry, induced by A-site Sn2+, was observed in Sn-doped SrTiO3 with Sn(Sr+Ti+Sn) at. % ratio = 0.1 using optical second harmonic generation measurements. The role of growth kinetics on the stability of Sn2+ in SrTiO3 is discussed.

show abstract

Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature

Cited by 283 publications

References 56 publications

Tuning optical properties of transparent conducting barium stannate by dimensional reduction

Tuning optical properties of transparent conducting barium stannate by dimensional reduction

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor

Contact Info

Product

Resources

About