Physical vapor deposition synthesis of tungsten monocarbide (WC) thin films on different carbon substrates

Abstract

Synthesis of high yield single helical carbon microsprings by catalytic chemical vapor deposition and an experimental investigation of their growth mechanism Investigation of the nanostructure and wear properties of physical vapor deposited CrCuN nanocomposite coatings J. Vac. Sci. Technol. A 23, 423 (2005); 10.1116/1.1875212Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressureThe synthesis of tungsten monocarbide ͑WC͒ thin films has been performed by physical vapor deposition on various substrates including glassy carbon, carbon fiber sheet, carbon foam, and carbon cloth. The WC and W 2 C phase contents of these films have been evaluated with bulk and surface analysis techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and scanning electron microscopy. These characterization techniques were also used to determine the effects of synthesis by nonreactive and reactive sputtering. The synthesis of WC particles supported on the carbon fiber substrate has also been accomplished using the temperature programmed reaction method. Overall, the results demonstrate that the phase purity of tungsten carbides can be controlled by the deposition environment and annealing temperatures.

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

“…Tungsten carbide (WC) is a very attractive refractory material for industrial applications of thin hard layers to steel [1][2][3][4][5][6][7][8][9][10][11][12] and Al alloys. WC has an excellent combination of properties, such as high hardness, a high Young's modulus, and a low COF.…”

“…It is these characteristics of WC which improve the other properties of materials [13]. WC layers have been deposited using chemical vapor deposition (CVD) [14][15][16][17][18][19][20][21][22] and physical vapor deposition (PVD) techniques [1][2][3][4][5][6][7][8][9][10][11][12][13][23][24][25][26][27][28][29][30][31]. Plasma enhanced CVD of tungsten hexacarbonyl has also been used for the deposition of WC/C layers at lower temperatures compared to those used in CVD techniques [15][16][17][18][19][20][21].…”

“…WC creates β-W 2 C [7,24] and β-WC 1-x [7,24,29] phases where the individual forms of C and WC have different indentation of hardness (H), indentation modulus (E) and COF. Various factors which influence the formation of both phases are as follows: the deposited substrate surface temperature [3,8,11,12,23]; applied pressure and bias voltage [4,24,27,28]; content of carbon in the layers [1,6,8,23]; the flow rate and composition of the precursor [3,4,6,29], and residual stress in the layers [26].…”

“…% of C. Another technique, XRD, identified a phase mixture of β-W 2 C and β-WC 1-x at this composition. Weigert et al [7] also prepared WC layers by reactive and nonreactive DC sputtering. The possibilities of temperature dependence on WC, WC 1-x and W 2 C phase preparation were investigated.…”

Preparation of Nanocrystalline Cu Films by Brush-Plating

“…Various techniques of preparing nc metal film materials, such as electrodeposition [5,6], direct current (DC) magnetron sputtering [7][8][9], physical vapor deposition [10], chemical vapor deposition [11], laser beam deposition [12], ion implantation [13], plasma and high-velocity oxygen fuel spraying [13] have been developed. Among these techniques, electrodeposition has been recognized to be the most technologically feasible and economically superior technique.…”