Physically Based Compact Mobility Model for Organic Thin-Film Transistor

Maiti, T. K.; Chen, L.; Zenitani, H.; Miyamoto, H.; Miura-Mattausch, Mitiko; Mattausch, H. J.

doi:10.1109/ted.2016.2540653

Cited by 13 publications

(8 citation statements)

References 36 publications

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“…Several other publications assumed an exponential DOS in the OSC and some of them used the carrier mobility model of Vissenberg and Matters to simulate OTFTs. In this case an analytical drain current expression can be obtained.…”

Section: Implementation Of Mobility Model In Otft Simulation Softwarementioning

confidence: 99%

Transport models in disordered organic semiconductors and their application to the simulation of thin‐film transistors

Simonetti

Giraudet

2019

Polymer International

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Relevant organic thin‐film transistor (OTFT) simulation software must account for the main specificities of organic semiconductors (OSCs) in terms of free carrier density of states, transport mechanisms and injection/collection properties from/to the device contacts. Among the parameters impacting the OTFT performance carrier mobility is a key parameter. Usual methods to extract the mobility from current–voltage measurements lead to only an apparent, or effective, mobility. The value of the apparent mobility is different from the intrinsic channel OSC mobility. Although the effective mobility actually determines most of a given device performance, therefore providing a very useful technology benchmark, it does not describe the intrinsic OSC material transport properties, and may even be misleading in the route to improving the OTFT fabrication process. To obtain a better understanding of the transport properties in OSCs using OTFT electrical characterization, implementing an appropriate physical mobility model in OTFT current–voltage simulation software is mandatory. The present paper gives a review of the carrier mobility models which can be implemented in OTFT simulation software. The review is restricted to analytical and semi‐analytical physical models taking into account the temperature, the carrier concentration and the electric field dependence of the carrier mobility in disordered OSCs. © 2019 Society of Chemical Industry

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Section: Implementation Of Mobility Model In Otft Simulation Softwarementioning

confidence: 99%

Transport models in disordered organic semiconductors and their application to the simulation of thin‐film transistors

Simonetti

Giraudet

2019

Polymer International

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“…The energy difference between them is the bandgap energy (E g ), in which the conduction is sophisticated and takes place by carrier hopping between two neighboring localized states as shown in Fig. 1(b) [10].…”

Section: The Hopping Mobility Modelmentioning

confidence: 99%

“…In organic semiconductor, the disorder in the molecular arrangement and the presence of grain boundaries lead to the high density of localized states. Based on [10], we obtain the hopping mobility (μ HOP ) equation as…”

Section: The Hopping Mobility Modelmentioning

confidence: 99%

“…Horowitz et al [6] and Servati et al [7] explained the relationship between mobility and temperature based on the multiple trap and release (MTR) in organic semiconductors. Maiti et al [8]- [10] summarized several carrier transport mechanisms and developed a physical-based compact mobility model as a function of surface potential. However, it did not study the temperature characteristic of OTFTs.…”

Section: Introductionmentioning

confidence: 99%

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A Mobility Model Considering Temperature and Contact Resistance in Organic Thin-Film Transistors

Deng

et al. 2020

IEEE J. Electron Devices Soc.

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Based on the device physics, a mobility model for organic thin-film transistors (OTFTs) is presented considering temperature and contact resistance. As a function of the surface potential, the mobility model including hopping mechanism is able to explain the dependence of temperature and gate bias. The contact resistance is also considered in order to extract the correct mobility. Furthermore, with the assumption that the trapped carrier concentration dominates Poisson's equation, and combining the mobility model, a DC compact model accounting for contact resistance and temperature is proposed suitable for the temperature scaling from 83 to 295K. Through the extensive comparisons between the model results and the numerical iteration or experimental data, the validity of the mobility and current models is strongly supported. INDEX TERMS Mobility model, organic thin-film transistors, temperature, contact resistance, hopping, DC model.

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“…First, of the reported models, only one reported model [215] In the perspective of Printed Electronics circuits, these variations are largely insufficient for well-matched transistors pairs for high-precision differential amplifiers.…”

Section: Designabilitymentioning

confidence: 99%

Printed electronics : modeling, variations and bending

Zhou¹

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Physically Based Compact Mobility Model for Organic Thin-Film Transistor

Cited by 13 publications

References 36 publications

Transport models in disordered organic semiconductors and their application to the simulation of thin‐film transistors

Transport models in disordered organic semiconductors and their application to the simulation of thin‐film transistors

A Mobility Model Considering Temperature and Contact Resistance in Organic Thin-Film Transistors

Printed electronics : modeling, variations and bending

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