Physically Flexible, Rapid‐Response Gas Sensor Based on Colloidal Quantum Dot Solids

Liu, Huan; Li, Min; Voznyy, Oleksandr; Long, Hu; Fu, Qiuyun; Zhou, Daoguo; Xia, Zhe; Sargent, Edward H.; Tang, Jiang

doi:10.1002/adma.201304366

Cited by 342 publications

(254 citation statements)

References 38 publications

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“…A wide range of doping strategies have shown both doping polarities in PbS QDs 116 , making it a versatile sensitizing system to combine with any channel material. Solution-processed CQD optoelectronic devices have already demonstrated compatibility with CMOS technology 117,118 and flexible device concepts 119,120 .…”

Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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The large diversity of applications in our daily lives that rely on photodetection Photodetectors are one of the key components in many optoelectronic devices which transduce optical into electrical information. Today, photodetectors have reached a mature technology level and address a huge application spectrum including imaging, remote sensing, fibre-optic communication and spectroscopy among many others. However, to tackle challenges and to surpass existing limitations in sensitivity of state-of-the-art photodetector systems, new device architectures and material systems are needed which offer low-cost fabrication and high performance over a wide spectral range. The active research field on photodetection grows and many novel nanostructured material systems 1 have been employed for light sensing including Quantum dots 2,3 , Perovskites 4,5 , organic molecules and polymers 6,7 , Carbon Nanotubes 8,9 , Graphene 10,11 and the large field of semiconducting 2D materials such as the transition metal dichalcogenides (TMDCs) and black phosphorus 12,13 .Photodetector performance is governed by both the optical and electronic properties of the employed semiconductor. The former determines the spectral coverage and quantum efficiency of the detector whereas the latter determines, through the carrier transport and carrier density, the amount of dark current flowing through the device, as well as the efficiency of charge separation and collection upon illumination. The key parameters for a strong signal response are a high photon to electron conversion rate (quantum efficiency) and ideally an inherent gain 3 mechanism, which yields multiple carriers per absorbed photon. The response signal is then weighed against the noise portion of the ratio, which has to be minimized for maximum sensitivity. There are several device-external noise sources, such as the photon noise due to the statistical arrival of photons on the device or the read-out noise in photodetector arrays that originates in preamplifier electronics. Here, we will put emphasis on the device (photodetector pixel) inherent noise, which stems partially from thermally generated charge carriers and also from the intrinsic carrier density that contribute to the dark current of the device (shot noise limit) as well as flicker noise (1/f). It is however important to note that the sensitivity of a detector with inherent noise lower than the noise floor of commercially used CMOS read-out circuits, typically met in photodiodes, is limited by the latter, thus a photodetector technology with an inherent gain mechanism is desired to alleviate this effect.The relevant performance metrics and terminology used throughout this article are described in Box 1. Box 1 -Performance metrics for photodetection Responsivity [A/W]The fundamental process behind photodetection is absorption of light. Responsivity R, a measure of output current per incoming optical power in units of A/W, describes how a detector system responds to illumination. Responsivity depends on the incident...

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Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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“…In that work different additives, such as Brought to you by | MIT Libraries Authenticated Download Date | 5/9/18 10:39 AM Synthesized PbS nanoparticulate thin films for a rapid NO 2 gas sensor 205 organic substances were introduced into the reaction bath in order to improve sensitivity of the sensing device [21]. Recently Liu et al reported physically flexible and fast response gas sensor based on colloidal PbS quantum dots, having response time of 4 s [22]. This device consisted of a paper on which PbS quantum dots were spin coated and it worked at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Chemically synthesized PbS Nano particulate thin films for a rapid NO₂ gas sensor

Burungale

Devan

Pawar

et al. 2016

Materials Science-Poland

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Rapid NO 2 gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO 2 gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO 2 gas was measured at different operating temperatures, from 50 to 200 • C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 • C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO 2 at 150 • C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.

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“…Especially the fi elds of medical [ 7 ] and consumer electronics [ 8 ] benefi t from the variety of already available fl exible devices including electrode arrays, [ 9,10 ] solar cells, [ 11 ] diagnostic devices, [12][13][14][15] displays, [ 16 ] memory elements, [ 17,18 ] and various types of sensors. [19][20][21][22][23][24] At the moment, postprocessing, e.g., signal amplifi cation, or multiplexing of the data acquired by entirely fl exible and even imperceptible devices, [ 5,[25][26][27][28] such as pressure, [ 11,29,30 ] temperature, [ 26,30 ] encephalography, [ 7,27 ] or magnetic fi eld [ 22,24,25 ] sensors, is done using external rigid electronics. The connection between the fl exible and the rigid parts of the measurement system is established using cables.…”

Section: Doi: 101002/aelm201600188mentioning

confidence: 99%

Entirely Flexible On‐Site Conditioned Magnetic Sensorics

Münzenrieder

Karnaushenko

Petti

et al. 2016

Adv Elect Materials

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Physically Flexible, Rapid‐Response Gas Sensor Based on Colloidal Quantum Dot Solids

Cited by 342 publications

References 38 publications

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Chemically synthesized PbS Nano particulate thin films for a rapid NO₂ gas sensor

Entirely Flexible On‐Site Conditioned Magnetic Sensorics

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Physically Flexible, Rapid‐Response Gas Sensor Based on Colloidal Quantum Dot Solids

Cited by 342 publications

References 38 publications

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Chemically synthesized PbS Nano particulate thin films for a rapid NO2 gas sensor

Entirely Flexible On‐Site Conditioned Magnetic Sensorics

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Chemically synthesized PbS Nano particulate thin films for a rapid NO₂ gas sensor