Physics-based electron device modelling and computer-aided MMIC design

Abstract

Abstract-The paper provides an overview on the state of the art and future trends in physics-based electron device modelling for the computer-aided design of monolithic microwave IC's. After a review of the main physics-based approaches to microwave modelling, special emphasis is placed on innovative developments relevant to circuit-oriented device performance assessment, such as efficient physics-based noise and parametric sensitivity analysis. The use of state-of-the-art physicsbased analytical or numerical models for circuit analysis is discussed, with particular attention to the role of intermediate behavioural models in linking multidimensional device simulators with circuit analysis tools. Finally, the model requirements for yield-driven MMIC design are discussed, with the aim of pointing out the advantages of physics-based statistical device modelling; the possible use of computationally efficient approaches based on device sensitivity analysis for yield optimization is also considered.

Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models

“…Moreover, all the techniques described in this paper can, in principle, be extended to nonstationary transport models. The drift-diffusion model equations are well known (see e.g., [2] and references therein) and will not be repeated here; one need only recall that the model unknowns are the electron and hole densities , , and the potential distribution . Let one assume that a suitable spatial discretization scheme [15] has been applied to the model partial differential equations, so as to obtain a system of time-domain ordinary differential equations, where is the number of discretization nodes.…”

“…To fix the ideas, a 2-D drift-diffusion bipolar model will be considered, including Poisson, and the electron and hole continuity equations. As mentioned in [2], the drift-diffusion model, despite its wellknown limitations in the treatment of submicron devices, can still be assumed as the basis for a quantitative discussion of the device behavior versus the technological parameters. In fact, nonstationary transport effects can be (at least approximately) allowed for through heuristical models [2].…”

“…As mentioned in [2], the drift-diffusion model, despite its wellknown limitations in the treatment of submicron devices, can still be assumed as the basis for a quantitative discussion of the device behavior versus the technological parameters. In fact, nonstationary transport effects can be (at least approximately) allowed for through heuristical models [2]. Moreover, all the techniques described in this paper can, in principle, be extended to nonstationary transport models.…”

“…As discussed in [2], a fundamental block in an integrated technological computer-aided design (TCAD) environment leading from process data to electrical circuit simulation and design is the physics-based active device model. This model is needed to provide an accurate link between process Manuscript received August 6, 1996; revised December 5, 1996.…”

“…In [2], a different strategy was proposed to enable the efficient LS analysis under periodic excitation through physicsbased models. The basic idea was to exploit accurate circuitoriented intermediate models directly identified through the physics-based analysis of the (almost) intrinsic device.…”