Equivalent Circuit Modelling

Iezekiel, Stavros

doi:10.1007/978-1-4471-2048-3_8

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2000

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Cited by 3 publications

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“…The modelling of such a system can be done in several ways. In the equivalent-circuit method [1] used in many CAD packages the characteristics of the device are modelled by constructing an equivalent electrical circuit mimicking the electrical responses at the device terminals. However, these characteristics depend crucially on the geometry of the device and on the underlying solid-state processes, and the equivalent circuit method is not capable of adequately taking these subtleties into account.…”

Section: Introductionmentioning

confidence: 99%

Integral evaluation in the mathematical and numerical modelling of high-electron-mobility transistors

Cole¹

2000

J. Phys.: Condens. Matter

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The main processes involved in the mathematical and numerical modelling of high-electron-mobility transistors are presented. The governing equations must be solved rapidly and accurately for the simulation to be of use in CAD (computer-aided design) packages. New analytic approximations are derived for certain integrals which arise in the simulation, enabling these integrals to be calculated rapidly. Results produced in this way are compared with those produced using earlier less accurate approximations.

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Section: Introductionmentioning

confidence: 99%