Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Abstract

In this study, a physics-based model for light punch through (LPT) carrier stored trench bipolar transistor (CSTBT) is developed. The model is based on the Fourier series solution of ambipolar diffusion equation implemented in MATLAB and Simulink. In the model, the MOS-side two-dimensional (2D) effects resulting from trench gate and carrier storage layer are studied analytically. Assuming high-level injection in LPT buffer layer, the model also describes the carrier transport, redistribution and recombination in the buffer layer in details. The static and transient experiments for a commercial CSTBT are used to validate the presented model. The simulation results are compared with experiment results and good agreement is obtained.

A Temperature-Dependent $dV_{CE}/dt$ and $dI_{C}/dt$ Model for Field-Stop IGBT at Turn-on Transient

“…2b, the excess carrier density in the FS layer at T 3 -T 8 in phase 2 is 2 × 10 15 − 2 × 10 16 cm −3 , which is in the same order or surpasses FS layer doping concentration (10 15 − 10 16 cm −3 ) [3], [4]. Therefore, high-level injection assumption should be adopted for the FS layer in the FS IGBT modeling [10], [20], [26]- [28]. Fig.…”

A Temperature-Dependent dVCE/dt Model for Field-Stop IGBT at Turn-Off Transient

“…Firstly, the model directly uses the Hefner PT IGBT model [18] to model the FS IGBT and low-level injection is assumed on the FS layer. Since the FS layer is optimized to be thin and lightly doped, the excess carrier in the FS layer can surpass FS layer doping concentration and high-level injection assumption is required [19]- [23]. Secondly, the model assumes excess carrier in Nbase linearly distributed in N-base, which is not accurate and can give rise errors on the prediction.…”