2012
DOI: 10.1134/s1063782612050065
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Physics of switching and memory effects in chalcogenide glassy semiconductors

Abstract: Time Reset Set Read T m T g Fig. 2. Active region temperature during writing (set) and erasing (reset).Fig. 33. Dependences of V 0 /T on T 0 . The transition tem perature T* is indicated near the curves; V 0 = F 0 L.

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Cited by 64 publications
(20 citation statements)
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References 119 publications
(247 reference statements)
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“…As a result at T ¼ 300 K the conductivity increases by a factor of 10 5 . This shows that the nonlinear conductivity and the sufficient increase of the current while data recording in chalcogenide-based phasechange memory [14,15] may be due to the correlation energy sign change in strong electric field and the conductivity transition.…”
mentioning
confidence: 92%
“…As a result at T ¼ 300 K the conductivity increases by a factor of 10 5 . This shows that the nonlinear conductivity and the sufficient increase of the current while data recording in chalcogenide-based phasechange memory [14,15] may be due to the correlation energy sign change in strong electric field and the conductivity transition.…”
mentioning
confidence: 92%
“…An electrical switching (ES) is an abrupt, significant, and reversible change in the conductivity of an electric element under the applied electric field or a flowing current. Current-voltage characteristic (I-V) of the element contains areas with negative differential resistance (NDR), created by the positive feedback of current (S-type I-V) or voltage (N-type I-V) [21][22][23][24]. However, this feedback is internal and is not created by external circuit elements, like in radio circuits with operational amplifiers.…”
Section: Introductionmentioning
confidence: 99%
“…In the amorphous semiconductors material class, the phenomena of electrical instability are mainly studied in chalcogenide glasses (CGSs), which contain elements of VI group (Se, S, and Te) and elements of the type Si, Ge, Bi, Sb, As, and P). In CGSs, the switching can have the stable part of NDR (Figure 1a), the unstable part of NDR ( Figure 1b), and the memory effect ( Figure 1c) [21]. Among transition metal oxides, S-type threshold switching is observed in metal-oxide-metal (MOM) structures based on Nb 2 O 5 , NbO 2 , TiO 2 , VO 2 , Ta 2 O 5 , Fe oxide, and some other oxides [22,24].…”
Section: Introductionmentioning
confidence: 99%
“…Amorphous chalcogenide films have a wide range of varying physical and chemical properties, which find applications in electronics and optoelectronics [1][2][3][4][5]. Functionality of thin films obtained from glassy materials often derives from their structure at different length scales.…”
Section: Introductionmentioning
confidence: 99%