“…In the amorphous semiconductors material class, the phenomena of electrical instability are mainly studied in chalcogenide glasses (CGSs), which contain elements of VI group (Se, S, and Te) and elements of the type Si, Ge, Bi, Sb, As, and P). In CGSs, the switching can have the stable part of NDR (Figure 1a), the unstable part of NDR ( Figure 1b), and the memory effect ( Figure 1c) [21]. Among transition metal oxides, S-type threshold switching is observed in metal-oxide-metal (MOM) structures based on Nb 2 O 5 , NbO 2 , TiO 2 , VO 2 , Ta 2 O 5 , Fe oxide, and some other oxides [22,24].…”