Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory

Abstract

The multilevel switching of conductive bridge resistive memory is characterized by the ON-state resistance (R ON ) being inversely proportional to the compliance current (I CC ). The constant of this relation is shown to be universally correlated to the minimum SET voltage (V SETðminÞ ) for all conductive bridge devices. V SETðminÞ , required to switch the memory from high resistance state to low resistance state, can be extracted using small voltage sweep rates. The correlation has been verified by experiments on Cu/TaO x /Pt devices and confirmed for data on resistive devices reported in the literature. The physical domain of validity for the R ON -I CC relation has been established.

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

“…The relation between compliance current and LRS resistance can be fitted by R ON = 0.2 / I CC , where I CC is the compliance current and 0.2 constant is the voltage constant in units of V. In ref. [17] this constant has been identified as the minimum SET voltage under which the device can be switched on. This relation provides the basis for multilevel cell of CBRAM.…”

Chua's Constitutive Memristor Relations for Physical Phenomena at Metal–Oxide Interfaces

“…This dependence has been recently observed in resistive switching devices [34]. For fast ramps, we assume that the lower time boundary should be zero and results in the following expression: (29) It follows that (30) For fast ramp rates, the model predicts that the reset voltage increases with square root of the ramp rate.…”

“…In case of a voltage ramp , the time needed to SET the memristor device is given as . Therefore (16) Solving (16) for and assuming that the critical flux that renders the device conductive at is a constant for the device, one obtains (17) Indeed, it has been observed experimentally [29], [34] that the set voltage increases with increasing ramp rate. Although, we don't have specific data for Williams device, the increase of voltage as a function of the ramp rate is a universal observation in the resistive switching devices [30], [31].…”

Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO<inf>x</inf>/SiO<inf>2</inf> solid electrolytes

“…Further, it has been extensively investigated that the active electrode of silver (Ag), copper (Cu) and nickel (Ni) to electrochemically form and break the metallic pathways in solid electrolyte can realize the low resistance state (LRS) and high resistance state (HRS) respectively [8][9][10]. For the operation of PMCs, a suitable current compliance (I CC ) is recommended to control the degrees of CF for better RS properties [11]. In this work, Ag-PMCs with stacked SiO x /SiO 2 solid electrolytes under different I CC at set process have been studied.…”