The multilevel switching of conductive bridge resistive memory is characterized by the ON-state resistance (R ON ) being inversely proportional to the compliance current (I CC ). The constant of this relation is shown to be universally correlated to the minimum SET voltage (V SETðminÞ ) for all conductive bridge devices. V SETðminÞ , required to switch the memory from high resistance state to low resistance state, can be extracted using small voltage sweep rates. The correlation has been verified by experiments on Cu/TaO x /Pt devices and confirmed for data on resistive devices reported in the literature. The physical domain of validity for the R ON -I CC relation has been established.

The paper reports on a novel process flow to manufacture conductive organic electrodes from highly conductive doped PEDOT:PSS polymer films that can be patterned and display a good adhesion to oxidized Si wafers as well as to flexible substrates, such as Mylar. Among other results, it is shown that multiple depositions of PEDOT:PSS increase the electrical conductivity by more than two orders of magnitude without increasing the film thickness of PEDOT:PSS significantly. An exponential dependence between sheet resistance and the number of PEDOT:PSS coatings has been found. The electrical conductivity of PEDOT:PSS can be increased by another two orders of magnitude doping with Cu nanoparticles when coated on the surface of a soft-baked PEDOT:PSS film. It is found, however, that both kinds of conductivity enhancement are not additive. Adhesion of PEDOT:PSS to oxidized Si wafers and BoPET (Mylar) has been ensured by applying an oxygen plasma cleaning step before spin coating. The manufactured high-conductivity PEDOT:PSS film can be patterned using a sacrificial metal layer with subsequent etching of PEDOT:PSS in oxygen plasma, followed by the removal of the patterned segments of the sacrificial metal layer in an aqueous acid solution.

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Despite a considerable number of memristor models of different complexity proposed in the literature, there is an ongoing debate over what kind of memristor model should be universally adopted for exploration of the unique opportunities integrated memristor circuits may offer. Here, we follow Chua's approach, that models for characteristics are devoid of predictive power and that instead a memristor model should be expressed in terms of electric flux and total charge only-independent of any specific driving input. Accordingly, Chua's constitutive memristor relations are constructed explicitly for Williams' famous TiO device in terms of . It is shown that this kind of model describes correctly the prevalent physical phenomena at the metal-oxide interfaces and is able to predict without any further parameters or assumptions, the dependence of and voltages on the particular input voltage wave form. The impact of thermal (memory) effects on device performance is explored in numerical simulations.