2016
DOI: 10.1007/s00339-016-9760-0
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Picosecond pulsed laser deposition of metal-oxide sensing layers with controllable porosity for gas sensor applications

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Cited by 11 publications
(8 citation statements)
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“…The development of sensitive gas sensors is an active research domain due to the serious safety hazard problems implied by its use [1,2,3,4]. WO 3 is a wide band gap n-type metal oxide semiconductor, which is used for detecting various gases [2].…”
Section: Introductionmentioning
confidence: 99%
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“…The development of sensitive gas sensors is an active research domain due to the serious safety hazard problems implied by its use [1,2,3,4]. WO 3 is a wide band gap n-type metal oxide semiconductor, which is used for detecting various gases [2].…”
Section: Introductionmentioning
confidence: 99%
“…WO 3 is a wide band gap n-type metal oxide semiconductor, which is used for detecting various gases [2]. In the case of hydrogen sensing, satisfactory results are obtained only when combined with catalytic metals such as Pt [5] or Pd [6,7], which lead to the dissociation of H 2 and generates H + ions and electrons, which diffuse into the WO 3 layer.…”
Section: Introductionmentioning
confidence: 99%
“…An alternative method to control crystallization is to postanneal the amorphous thin films in furnace after PLD, but the grain size and nanostructures would change after furnace heating. [18] Ultrafast laser ablation is promising to improve the deposition area control of PLD by effectively shortening the targetto-substrate distance. As reported previously, homogeneous nanoparticles have been obtained on the surface of various bulk materials after ultrafast laser ablation.…”
Section: Introductionmentioning
confidence: 99%
“…An alternative method to control crystallization is to postanneal the amorphous thin films in furnace after PLD, but the grain size and nanostructures would change after furnace heating. [ 18 ]…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation