Picosecond timing of high-energy heavy ions with semiconductor detectors

Eremin, V.; Kiselev, O.; Egorov, N. N.; Eremin, I. V.; Tuboltsev, Yuri; Verbitskaya, E.; Gorbatyuk, Andrei

doi:10.1016/j.nima.2015.05.022

Cited by 8 publications

(4 citation statements)

References 7 publications

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“…The radiation test of the reference silicon pad detector carried out with 40 Ar ions demonstrated that the rise time of the current pulse response was not affected by the fluence up to 2×10 11 ion/cm 2 . This confirms the physics of the current response leading edge generation via the track polarization [2].…”

Section: Discussionsupporting

confidence: 76%

“…This stability of the current response rise time agrees with the model describing formation of the current response leading edge in semiconductor detectors via a flow of the polarization current in dense tracks of heavy ions. As shown in [2], the response rise time is controlled by the polarization phase duration dependent of the initial carrier density in the track, which is not affected by irradiation.…”

Section: Radiation Testmentioning

confidence: 98%

“…Our preliminary evaluations of the introduction rates of radiation defects in single-crystal pure silicon showed that the amount of electrically active defects produced by a single heavy ion can be more than 1000. Thus, the fluence accumulated by the TOF detectors within five years can give an effect equivalent to the 1 MeV neutron fluence (1 defect per neutron) up to 10 16 n eq /cm 2 . The results of the CERN-RD50 collaboration and our original study [3,4] define the increase of the detector dark current I as…”

Section: Super-frs At Gsi and The Requirements For The Tof Diagnosticsmentioning

confidence: 99%

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Beam tests of full-size prototypes of silicon detectors for TOF heavy-ions diagnostics in Super-FRS

et al. 2017

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The full-size prototypes of large-area silicon detectors for the Time-Of-Flight (TOF) diagnostics of heavy ions were tested with 132Xe (600 MeV/u) beam. The obtained time resolution of the prototypes was about 13 ps, which satisfied the requirements of diagnostics for the Super Fragment Separator (Super-FRS) that is under development at GSI, Darmstadt, Germany. The irradiation effect on the timing properties of silicon detectors was studied with super-fast silicon pad detectors with a rise time of 190 ps. It was shown that the changes in the rise time of the leading edge of the detector current response to 40Ar ions (40.5 MeV/u) were negligible up to the fluence of 2 × 1011 ion/cm2 expected after one year of Super-FRS operation. This result confirms the model of the leading edge current pulse formation via a flow of the polarization current in dense tracks of heavy ions and shows the perspectives for application of silicon detectors for the TOF diagnostics of intensive heavy-ion beams.

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Section: Discussionsupporting

confidence: 76%

Section: Radiation Testmentioning

confidence: 98%

Section: Super-frs At Gsi and The Requirements For The Tof Diagnosticsmentioning

confidence: 99%

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Beam tests of full-size prototypes of silicon detectors for TOF heavy-ions diagnostics in Super-FRS

et al. 2017

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“…Therefore, semiconductor detectors are regarded as candidates to replace plastic scintillators and provide the required time resolution and radiation hardness. Preliminary beam tests with detectors processed on silicon showed the TOF resolution better than 20 ps rms obtained in the experiments with 197 Au and 40 Ar ions [5,6].…”

Section: Introductionmentioning

confidence: 84%

A comparative study of silicon detector degradation under irradiation by heavy ions and relativistic protons

et al. 2018

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Silicon detectors irradiated by 40Ar ions with the energy of 1.62 GeV were studied with the goal to find the parameters of radiation damage induced by ions. The measurements of the I–V characteristics, temperature dependences of the detector bulk current, deep level spectra and current pulse response were carried out for detectors irradiated within the fluence range 5×1010–2.3×1013 ion/cm2 and the obtained results were compared with the corresponding data for detectors irradiated by 23 GeV protons. It is shown that the processes of defect introduction by ions and overall radiation damage are similar to those induced by 23 GeV protons, while the introduction rates of radiation defects and current generation centers are about ten times higher for irradiation by 40Ar ions. The fact that these processes have much in common gives grounds to use the physical models and characteristic parametrization such as those developed earlier for detectors irradiated by protons and neutrons to build the long-term scenario of Si detector operation in the Time-Of-Flight diagnostic system of Super FRagment Separator designed at GSI for the future Facility for Antiproton and Ion Research, FAIR.

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Timing Measurements

2017

Signal Processing for Radiation Detectors

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Picosecond timing of high-energy heavy ions with semiconductor detectors

Cited by 8 publications

References 7 publications

Beam tests of full-size prototypes of silicon detectors for TOF heavy-ions diagnostics in Super-FRS

Beam tests of full-size prototypes of silicon detectors for TOF heavy-ions diagnostics in Super-FRS

A comparative study of silicon detector degradation under irradiation by heavy ions and relativistic protons

Timing Measurements

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