Picosecond transient thermoreflectance for thermal conductivity characterization

Jeong, Jihoon; Meng, Xianghai; Rockwell, Ann K.; Bank, Seth R.; Hsieh, Wen‐Pin; Lin, Jung‐Fu; Wang, Yaguo

doi:10.1080/15567265.2019.1580807

Cited by 22 publications

(4 citation statements)

References 47 publications

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“…In order to measure the out-of-plane thermal conductivity of the Ga O , transient thermoreflectance (TTR) was used. This technique uses a nanosecond laser heating pulse and a continuous wave probe laser to measure the transient thermal response 24 . A frequency tripled 10 ns 355 nm Nd:YAG pump laser with a 30 kHz repetition rate and a spot diameter of 85 m was used to heat up the sample surface and a 532 nm probe laser with spot size of about 2 m was used to measure the induced transient reflectivity change.…”

Section: Methodsmentioning

confidence: 99%

Electrical and thermal characterisation of liquid metal thin-film Ga$$_2$$O$$_3$$–SiO$$_2$$ heterostructures

Petkov

Mishra

Cattelan

et al. 2023

Sci Rep

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Heterostructures of Ga$$_2$$ 2 O$$_3$$ 3 with other materials such as Si, SiC or diamond, are a possible way of addressing the low thermal conductivity and lack of p-type doping of Ga$$_2$$ 2 O$$_3$$ 3 for device applications, as well as of improving device reliability. In this work we study the electrical and thermal properties of Ga$$_2$$ 2 O$$_3$$ 3 –SiO$$_2$$ 2 heterostructures. Here, thin-film gallium oxide with thickness ranging between 8 and 30 nm was deposited onto a silicon substrate with a thermal oxide by means of oxidised liquid gallium layer delamination. The resulting heterostructure is then characterised by means of X-ray photoelectron spectroscopy and transient thermoreflectance. The thin-film gallium oxide valence band offset with respect to the SiO$$_2$$ 2 is measured as 0.1 eV and predicted as $$-2.3$$ - 2.3 eV with respect to diamond. The thin-film’s out-of-plane thermal conductivity is determined to be 3 ±0.5 Wm$$^{-1}$$ - 1 K$$^{-1}$$ - 1 , which is higher than what has been previously measured for other polycrystalline Ga$$_2$$ 2 O$$_3$$ 3 films of comparable thickness.

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Section: Methodsmentioning

confidence: 99%

Electrical and thermal characterisation of liquid metal thin-film Ga$$_2$$O$$_3$$–SiO$$_2$$ heterostructures

Petkov

Mishra

Cattelan

et al. 2023

Sci Rep

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“…TR measurement is a non-invasive, noncontact, high-speed, high-spatial and temperature-resolution, and high-accuracy method; therefore, it has been used especially for the measurements of the temperature and thermal properties of micro and nano materials. [1][2][3][4][5][6][7][8][9] In addition, the temperature mapping of gold nanowires using TR has recently been reported, 10) and TR measurement is expected to realize large-area temperature mapping with high spatial and temperature resolutions. 11,12) In current TR measurement methods, a metal film with well-known optical properties and a large reflectance change with respect to temperature change (TR coefficient) is generally deposited on the surface of a sample by vapor deposition or plating.…”

Section: Introductionmentioning

confidence: 99%

Numerical calculation of thermoreflectance coefficient of c-Si for wavelengths of 200–800 nm and temperatures of 300–500 K

Shimofuri,

Murakami,

Miyake

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, the thermoreflectance (TR) coefficient of c-Si is numerically calculated over the wavelength range of 200–800 nm and the temperature range of 300–500 K using a complex permittivity model that considers interband transitions and free carriers. The calculated results are in good agreement with literature values, and it is found that the temperature dependence of the TR coefficient is almost negligible at wavelengths above 500 nm. On the other hand, in the wavelength range of 200–500 nm, the TR coefficient depends strongly on the wavelength, and the temperature stability also changes significantly depending on the wavelength. This suggests that the wavelength of the probe light for TR measurement should be appropriately selected to realize high sensitivity and temperature stability, considering the constraints of the optical system and the temperature range of the sample.

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“…In addition, the TL-TTR technique does not require the deposition of the metal transducer . Compared to conventional metal-transducer transient thermoreflectance methods, − one unknown variable (transducer/GaN TBC) and several controlled parameters related to the metal transducer (e.g., metal thermal conductivity, heat capacity, and thickness) can be removed from the analysis, decreasing the fitting uncertainty.…”

Section: Introductionmentioning

confidence: 99%

Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN-based HEMTs

Yuan

Meng

Mao

et al. 2022

ACS Appl. Electron. Mater.

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Measuring the thermal properties of the buried GaN buffer layer and interface in GaN high-electron mobility transistor (HEMT) structures is of crucial importance. This remains challenging with the traditional pump−probe thermoreflectance techniques due to their limited thermal penetration depths and the difficulty in extracting the large number of unknown parameters in the multilayer HEMT structure. This work applies a transducer-less transient thermoreflectance technique (TL-TTR) for the characterization. We experimentally and numerically investigate the dynamic thermal transport process of the TL-TTR measurement, benchmarking against that of the traditional metal transducer transient thermoreflectance (MT-TTR) measurement. The significantly different heat absorption and dissipation processes in the two measurements lead to the distinctive measurement sensitivities. Notably, the sensitivity of TL-TTR signal to all unknown thermal properties follows a distinctive trend over the measurement time region, demonstrating the technique's capability of measuring the buried buffer thermal conductivity and the thermal boundary conductance (TBC) across the buffer/substrate interface. This is illustrated by measuring three different GaN-on-SiC wafers with highly Fe-doped buffer layers. The uncertainties of buffer thermal conductivity and TBC, determined by TL-TTR, are as low as ±6 and ±13%, respectively. In contrast, MT-TTR measures the buffer thermal conductivity and TBC with the uncertainties as large as ±20 and ±30%. The TL-TTR technique enables a non-invasive platform to characterize the thermal properties of the advanced GaN-based materials with complex structures and achieve a more in-depth understanding the phonon transport mechanisms.

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Picosecond transient thermoreflectance for thermal conductivity characterization

Cited by 22 publications

References 47 publications

Electrical and thermal characterisation of liquid metal thin-film Ga$$_2$$O$$_3$$–SiO$$_2$$ heterostructures

Electrical and thermal characterisation of liquid metal thin-film Ga$$_2$$O$$_3$$–SiO$$_2$$ heterostructures

Numerical calculation of thermoreflectance coefficient of c-Si for wavelengths of 200–800 nm and temperatures of 300–500 K

Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN-based HEMTs

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