Piezo-Raman measurements and anharmonic parameters in silicon and diamond

Anastassakis, E.; Cantarero, A.; Cardona, M.

doi:10.1103/physrevb.41.7529

Cited by 380 publications

(254 citation statements)

References 35 publications

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“…Note that strain at the Si/SiO 2 interface, which plays an important role in self-limiting oxidation, can influence the phonon frequency as well (see, e.g., Ref. 25).…”

Section: Fig 2 (Color Online) Pl Images and 50mentioning

confidence: 99%

Transition from silicon nanowires to isolated quantum dots: Optical and structural evolution

et al. 2013

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The evolution of the structural and optical properties of a silicon core in oxidized nanowalls is investigated as a function of oxidation time. The same individual nanostructures are characterized after every oxidation step in a scanning electron microscope and by low-temperature photoluminescence, while a representative sample is also imaged in a transmission electron microscope. Analysis of a large number of recorded single-dot spectra and micrographs allows to identify delocalized and localized exciton emission from a nanowire as well as confined exciton emission of a nanocrystal. It is shown how structural transitions from one-to zero-dimensional confinement affect single-nanostructure optical fingerprints.

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“…Note that strain at the Si/SiO 2 interface, which plays an important role in self-limiting oxidation, can influence the phonon frequency as well (see, e.g., Ref. 25).…”

Section: Fig 2 (Color Online) Pl Images and 50mentioning

confidence: 99%

Transition from silicon nanowires to isolated quantum dots: Optical and structural evolution

et al. 2013

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“…We considered the following wavelengths ͑in nm͒: 528. 7 lines whose separation is 20-100 cm Ϫ1 larger than 2ប LO or 20-100 cm Ϫ1 lower than 2ប TO . In both cases we can register the Stokes and anti-Stokes spectra separated by 20-100 cm Ϫ1 .…”

mentioning

confidence: 92%

“…The solution to that problem may be a reference line in the spectra. This may be the sharp line from a spectral lamp 7 or a plasma line from the laser. 5 The plasma lines seem more convenient because they arrive in the same beam as the exciting line.…”

Section: Introductionmentioning

confidence: 99%

“…In this article we propose another method which involves two laser lines and allows one to determine absolute phonon energies ͑and their shifts͒ with 0.1 cm Ϫ1 accuracy. The method doubles the shift of the lines, which is important when we consider small effects of the order of 1 cm Ϫ1 ͑the typical range in uniaxial stress experiments 7,8 ͒. It works well at room temperature ͑and above͒ for all materials that have a decent Raman signal so the anti-Stokes line can be measured.…”

Section: Introductionmentioning

confidence: 99%

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High accuracy Raman measurements using the Stokes and anti-Stokes lines

Trzeciakowski

Martı́nez-Pastor

Cantarero

1997

Journal of Applied Physics

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We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applied biaxial strain, laser power, and temperature.

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“…The degeneracy of the TO-phonon can be lifted. In the presence of strain, the frequencies can be obtained to terms linear in the strain solving the following secular equation [13,14] …”

Section: Dislocationsmentioning

confidence: 99%

Micro‐Raman study of strain fields around dislocations in GaAs

Irmer

Jurisch

2007

Physica Status Solidi (a)

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The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and stress fields around single dislocations with high lateral resolution. The strain and stress fields around single edge and screw dislocations in GaAs are considered, and the corresponding Raman shifts of the phonons are calculated. Due to the finite local resolution, mappings show averaged strain values. Requirements for lateral resolution and signal/noise ratios of the Raman measurements to characterize dislocations are discussed.

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Piezo-Raman measurements and anharmonic parameters in silicon and diamond

Cited by 380 publications

References 35 publications

Transition from silicon nanowires to isolated quantum dots: Optical and structural evolution

Transition from silicon nanowires to isolated quantum dots: Optical and structural evolution

High accuracy Raman measurements using the Stokes and anti-Stokes lines

Micro‐Raman study of strain fields around dislocations in GaAs

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