2012
DOI: 10.1002/adma.201104588
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Piezo‐Semiconductive Quasi‐1D Nanodevices with or without Anti‐Symmetry

Abstract: The piezopotential in floating, homogeneous, quasi-1D piezo-semiconductive nanostructures under axial stress is an anti-symmetric (i.e., odd) function of force. Here, after introducing piezo-nano-devices with floating electrodes for maximum piezo-potential, we show that breaking the anti-symmetric nature of the piezopotential-force relation, for instance by using conical nanowires, can lead to better nanogenerators, piezotronic and piezophototronic devices.

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Cited by 129 publications
(122 citation statements)
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“…With reference to nanostructures, we focused on the synthesis of arrays of ZnO nanorods because of their wide applications including nanogenerators23242526, laser2728, piezotronics2930, piezo-photo-tronics303132 and sensors with superior performances203334. As an illustrative example, we have considered an extremely simple, single-step, double-sided method for growing high-density, well-separated, vertically aligned ZnO nanorods on quartz resonators by means of the most typical nutrient solution20, i.e.…”
Section: Resultsmentioning
confidence: 99%
“…With reference to nanostructures, we focused on the synthesis of arrays of ZnO nanorods because of their wide applications including nanogenerators23242526, laser2728, piezotronics2930, piezo-photo-tronics303132 and sensors with superior performances203334. As an illustrative example, we have considered an extremely simple, single-step, double-sided method for growing high-density, well-separated, vertically aligned ZnO nanorods on quartz resonators by means of the most typical nutrient solution20, i.e.…”
Section: Resultsmentioning
confidence: 99%
“…figure 7 (d). The mechanism of piezoelectricity generation from ZnO NNs is similar to the conical or cylindrical like nanostructures as define in published work [29]. As the diameter of top and bottom of NNs were different therefore free charge carriers and piezoelectric potential will vary due to the difference of strain / stress at bottom and top.…”
Section: Methodsmentioning
confidence: 79%
“…Since the tip of NN will stretch more due to the inhomogeneous diameter, therefore the thin top will show better mechanical stability as compared to bottom. The amount of generated charges at the top will be more in magnitude as compared to bottom [29]. …”
Section: Methodsmentioning
confidence: 99%
“…(2.17)) is based on Lippmann theory, since we assume that there are no free charge carriers and the whole system is isolated. However, according to recent studies, the piezoelectric potential in a strained GaN nanostructure would be screened by the free charge carriers, since the as-grown GaN nanostructure always shows an n-type semiconducting behavior (Gao and Wang 2009;Romano et al 2011;Araneo et al 2012). In order to overcome this screening effect, the idea of controlling the screening effect by imposing external surface charges on the nanowire/nanotube system has recently been invalidated theoretically and experimentally (Kim et al 2012;Sohn et al 2013).…”
Section: Piezoelectric Potential In Gan Nanotubesmentioning
confidence: 96%