Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

Lueng, Chiu-ming; Chan, Helen L. W.; Fong, W.K.; Surya, C.; Choy, C. L.

doi:10.1557/proc-572-389

Cited by 3 publications

(4 citation statements)

References 12 publications

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“…d 11 of most monolayer MA 2 P 4 nanosheets is even larger than that of 2D TMDs (e.g., d 11 = 3.65 pm V −1 of MoS 2 , d 11 = 2.12 pm V −1 of WS 2 , d 11 = 4.55 pm V −1 of MoS 2 , and d 11 = 2.64 pm V −1 of WSe 2 ), [73] and d 33 (3.1 pm V −1 ) of bulk piezoelectric wurtzite GaN. [74] The compressive and tensile biaxial strain are shown to obvi ously improve and deteriorate the piezoelectric performance of MoSi 2 N 4 , respectively (Figure 5d). [69] Piezoelectric stress and strain responses are improved with the inplane strain from 4% to 4%.…”

Section: (5 Of 28)mentioning

confidence: 96%

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Emerging Versatile Two‐Dimensional MoSi₂N₄ Family

Yin

Gong

Guo

2023

Adv Funct Materials

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The discovery of 2D layered MoSi 2 N 4 and WSi 2 N 4 without knowing their 3D parents by chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA 2 Z 4 system due to its structural complexity and diversity as well as versatile and intriguing properties. Here, a comprehensive overview on the state-of-the-art progress of this 2D MA 2 Z 4 family is presented. Starting by describing the unique sandwich structural characteristics of the emerging monolayer MA 2 Z 4 , their versatile properties including mechanics, piezoelectricity, thermal transport, electronics, optics/optoelectronics, and magnetism is summarized and anatomized. The property tunability via strain engineering, surface functionalization and layered strategy is also elaborated. Theoretical and experimental attempts or advances in applying 2D MA 2 Z 4 to transistors, photocatalysts, batteries and gas sensors are then reviewed to show its prospective applications over a vast territory. New opportunities are further discussed and prospects are suggested for this emerging 2D family. The overview is anticipated to guide the further understanding and exploration on 2D MA 2 Z 4 .

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Section: (5 Of 28)mentioning

confidence: 96%

“…d 11 of most monolayer MA 2 P 4 nanosheets is even larger than that of 2D TMDs (e.g., d 11 = 3.65 pm V ‐1 of MoS 2 , d 11 = 2.12 pm V ‐1 of WS 2 , d 11 = 4.55 pm V ‐1 of MoS 2 , and d 11 = 2.64 pm V ‐1 of WSe 2 ), [ 73 ] and d 33 (3.1 pm V ‐1 ) of bulk piezoelectric wurtzite GaN. [ 74 ]…”

Section: Versatile Propertiesmentioning

confidence: 99%

Emerging Versatile Two‐Dimensional MoSi₂N₄ Family

Yin

Gong

Guo

2023

Adv Funct Materials

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“…Since the c -axes of individual pillars constituting the nanobuds deviate from the normal to surface direction, which is especially significant for the GLAD case, it is hardly possible to recalculate the measured effective coefficient into d 33 coefficient, which is typically obtained by PFM or interferometry on thin films or vertically standing nanowires. ,− In the literature, d 33 varies from ca. 4 to 7 pm/V depending on the film quality, substrate, and measurement method.…”

Section: Resultsmentioning

confidence: 99%

Magnetron Sputter Grown AlN Nanostructures with Giant Piezoelectric Response toward Energy Generation

Popok

Chirumamilla

Krekeler

et al. 2023

ACS Appl. Nano Mater.

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Piezoelectric III–N semiconductor nanostructures are of increasing interest to be used for sensor technologies and energy harvesting. Within this group of materials, AlN is known for the largest bulk piezoelectric constant, but piezoelectric properties of AlN nanostructures are not well studied. In the current work, AlN nanostructures are fabricated by reactive magnetron sputter deposition at normal and glancing angle orientations on Si substrates covered by a conductive TiN film. Ag nanoparticles are used to facilitate nucleation of the nanostructures, which are found to have a bud-like shape consisting of individual pillars/lamellae. These pillars exhibit a wurtzite-like hexagonal lattice and preferential growth direction along the c-axis. Piezoresponse force microscopy is used to characterize the properties of the nanostructures. Giant values of the piezoresponse coefficient are measured, reaching up to 6 times higher values compared to AlN bulk and thin films. The obtained results create a basis for optimization of the fabrication parameters enabling tuning of the AlN piezoelectric properties and further development of the technology toward the formation of large-area nanoscale matrixes for energy generation.

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“…In recent years, with the global spread of COVID-19, sterilization has become a part of people’s daily life. As the material with the largest band gap in the III–V group (the band gap is 6.2 eV at room temperature), AlN has great application potential in the field of disinfection and sterilization in the deep ultraviolet field. , In addition, AlN also has many other physical performance advantages, such as very high thermal conductivity (3.20 W·cm –1 ·K –1 ), high piezoelectric coefficient (4.9–5.1 pm·V –1 ), high radiation resistance, ,, etc. Among them, the most potential is that due to the greater thermal conductivity and critical electric field of AlN, AlN devices are likely to surpass current GaN devices in the field of high-voltage devices, AlN or AlGaN with high aluminum content can withstand higher voltages, currents, and temperatures than Si or SiC.…”

Section: Introductionmentioning

confidence: 99%

Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy

et al. 2022

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Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 arcsec; the advantages of similar FWHM values of (0002) and (101̅2) planes will have a huge advantage over other preparation methods such as MOCVD. From the cross-sectional TEM images of the AlN sample, it is found that the fusion of a large number of a + c type dislocations occur at the interface of the low temperature buffer layer and the epitaxial layer, which affects the growth mode of the epitaxial layer. The lower FHWM value of the E 2(high) peak of the Raman spectrum, the lower the point defect concentration, which made the sample gain higher energy defect emission bands in the PL spectra and higher transmittance in the UV–vis transmission spectrum.

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Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

Cited by 3 publications

References 12 publications

Emerging Versatile Two‐Dimensional MoSi₂N₄ Family

Emerging Versatile Two‐Dimensional MoSi₂N₄ Family

Magnetron Sputter Grown AlN Nanostructures with Giant Piezoelectric Response toward Energy Generation

Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy

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Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

Cited by 3 publications

References 12 publications

Emerging Versatile Two‐Dimensional MoSi2N4 Family

Emerging Versatile Two‐Dimensional MoSi2N4 Family

Magnetron Sputter Grown AlN Nanostructures with Giant Piezoelectric Response toward Energy Generation

Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy

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Emerging Versatile Two‐Dimensional MoSi₂N₄ Family

Emerging Versatile Two‐Dimensional MoSi₂N₄ Family