Piezoelectric control of resistance switching in VO2/Pb(Zr0.52Ti0.48)O3 heterostructure

Abstract

The VO2/Pb(Zr0.52Ti0.48)O3 (PZT) thin film heterostructure device was first grown to investigate the piezoelectric control of resistance switching in Vanadium dioxide (VO2) films with a PZT underlayer. The results show that upon applying a continuous gate-electric-field (Eb) on the heterostructure, a butterfly shape resistance (R) vs. Eb curve of VO2 was observed. This R-Eb curve agrees well with the strain vs. electric-field “butterfly” curve of the underlying PZT, indicating that the resistance changes in VO2 were induced by piezoelectric lattice strain at the VO2/PZT interface. A repeated pulsed Eb modulation of VO2 resistance was further demonstrated. The resistance of the VO2 film decreases under compressive strain and increases under tensile strain. The resistance of change of the VO2 film under different strains has been explained using the first-principles calculations. The above results show that repeatable resistance switching in the VO2 film can be realized in the VO2/PZT heterostructure with a small Eb around room temperature.

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

“…The VO 2 /ferroelectric heterojunctions have been fabricated and different polarization states in ferroelectrics can be tuned through the electric field. Therefore, different strain states are induced at the interface of VO 2 /ferroelectric and the multiresistance state of VO 2 is realized [144][145][146]. The MIT behavior of VO 2 is sensitive to the strain effect so that multi-resistance states are obtained.…”

“…These properties of VO 2 make it have a potential application in strain sensors (detailed in the next section). Zhang et al [145] reported a VO 2 /ferroelectric thin film heterostructure device and investigated the piezoelectric control of resistance switching in a VO 2 thin film, as the device shown in the inset of Figure 20a. Under the electric field, the piezoelectric effect of ferroelectric thin film introduces the lattice strain at the interface of a VO 2 /ferroelectric thin film, and leads to the reversible resistance change of VO 2 .…”

Non-volatile resistance switching in LaNiO3 films on PMN-PT substrates

“…But it can be seen that the result of the modulation is not very ideal. Zhang et al reported the piezoelectric control of resistance switching in the VO 2 film with the PZT underlayer, upon applying a gate-electric-field E b on the heterostructure, a butterfly shape resistance (R) vs. E b curve of VO 2 was observed [15]. The metal-insulator transitions can also be modified via the biaxial strain induced by the lattice mismatch with the substrate [5].…”

Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide

“…Still, there are several ways to modulate the strain of a thin film in situ. Attempts have been made to control the strain of thin films using piezoelectric materials [16][17][18][19][20][21][22][23][24][25][26]. They include some studies on the modification of the magnetic properties of (La, Sr)MnO 3 [16][17][18], CoFeB [19], and Ni [20] films, as well as some on the modification of the transition properties of VO x films [22][23][24][25][26], all grown on piezo layers or piezo substrates.…”

“…Attempts have been made to control the strain of thin films using piezoelectric materials [16][17][18][19][20][21][22][23][24][25][26]. They include some studies on the modification of the magnetic properties of (La, Sr)MnO 3 [16][17][18], CoFeB [19], and Ni [20] films, as well as some on the modification of the transition properties of VO x films [22][23][24][25][26], all grown on piezo layers or piezo substrates. It has been reported that the T tr of VO 2 films can be controlled through the strain of (1−x)Pb(Mg 1/3 Nb 2/3 )-xPbTiO 3 (PMN-PT) crystalline substrates by 1.35 • C [23] or by 6 • C [24].…”