Piezoelectric effect enhanced flexible UV photodetector based on Ga2O3/ZnO heterojunction

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

“…Wang et al 11 constructed a ZnO/Au/Ga 2 O 3 sandwich heterostructure, called MSM structure, with a high responsivity of 21.6 A W −1 , which is ascribed to the fast migration of photogenerated electrons and holes due to the synergistic effect of ZnO, Au, and Ga 2 O 3 . Wang et al 12 proposed a Ga 2 O 3 /ZnO heterojunction to fabricate an MSM-type UV photodetector on the PET substrate. The obtained photodetector achieves an improved responsivity of 2.49 A W −1 and detectivity of 1.98 × 10 14 Jones, which are attributed to the increase of the Schottky barrier and the widening of the depletion region, facilitating the separation of photoinduced electrons and holes.…”

“…The reasons originate from the high conductivity of MXenes, the good crystallization of ε-Ga 2 O 3 , and the well-matched energy level. Chen et al 21 detailed an MXene/β-Ga 2 O 3 Schottky junction UV photodetector with a high responsivity of 12.2 mA W −1 and detectivity of 6.1 × 10 12 Jones at zero bias under 248 nm. However, the application of MXenes in deep-UV photodetectors is still insufficient, and only a few of the above-mentioned articles have been reported.…”

Aqueous‐Printed Ga2O3 Films for High‐Performance Flexible and Heat‐Resistant Deep Ultraviolet Photodetector and Array

“…[2][3][4][5] The deep ultraviolet (DUV) photodetectors sensitive to the 200-280 nm range have extremely low noise great potential of wide bandgap semiconductors for flexible DUV photodetectors. [13,17,18] Taking material workability, growth cost, DUV sensitivity, and Young's modulus into consideration, Ga 2 O 3 is considered as one of the most preferred candidates for flexible DUV photodetectors with a wide bandgap of 4.4-5.3 eV and an absorption cutoff wavelength below 280 nm. [19][20][21][22] In addition, Ga 2 O 3 exhibits high robustness toward chemical corrosion, temperature, radiation, and electric fields, making it competent for harsh environment applications.…”

“…[10,11] Great efforts have been paid to develop flexible DUV photodetectors by the combination of organic/inorganic materials, elastic substrates, and assistant technologies (e.g., spray coating and transferring methods). [12][13][14][15][16][17][18] As reported by Qiu et al, photodetectors and arrays based on nanofibrils of P3HT-b-PHA are demonstrated with excellent flexibility for highly selective DUV image sensing application. [12] Assisted by a spray coating or transferring method to a flexible PET substrate, the ZnO quantum dots or AlGaN/GaN heterostructures not only maintain the excellent quality of the original materials, but also exhibit high ultraviolet photodetection performance and robust stability under bent condition.…”

Performance enhancement of a self-biased n-ZnO microwire/p-GaN heterojunction ultraviolet photodetector incorporating Ag nanowires

“…Alternatively, selfpowered PDs based on ZnO micro/nanostructures are designed with a Schottky junction or a p-n heterojunction by combining with other p-type materials. [17][18][19] Considering the same wurtzite crystal structure, similar lattice parameters, and similar magnitudes in the bandgap energy, the combination of a p-GaN layer with the ZnO nano/ microstructures can be employed to construct lowdimensional heterojunction ultraviolet optoelectronic devices. 20 However, some important problems restricting the practical applications of ZnO/GaN heterojunction optoelectronic devices still exist, such as poor charge transport and serious carrier recombination originated from the low mobility of metal oxides, poor crystallinity, surface defect density, etc.…”