Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells

Im, Jin Seo; Kollmer, H.; Gfrörer, O.; Off, J.; Scholz, F.; Hangleiter, A.

doi:10.1557/s1092578300003161

Cited by 7 publications

(12 citation statements)

References 12 publications

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“…The 1 eV hole-trap-like feature in Figs. 82 and 83 was ascribed to surface charge transition caused by switching the external voltage from out-of-phase to in-phase with the polarization field [224,353]. DLTS spectra measurements with optical injection performed for these structures indicated the presence of one dominant hole trap peak with the activation energy of 0.9 eV [224].…”

Section: Deep Traps In Gan/ingan and Algan/algan Leds And Ldsmentioning

confidence: 95%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

213

177

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Section: Deep Traps In Gan/ingan and Algan/algan Leds And Ldsmentioning

confidence: 95%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

213

177

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“…24,25 There was a 20% increase in the intensity of the yellow band. For higher irradiation doses, the intensity of the QW band further decreased and the relative intensities of the QW line to the yellow band also decreased.…”

Section: H32mentioning

confidence: 96%

Electron Irradiation Effects in GaN∕InGaN Multiple Quantum Well Structures

Polyakov

Smirnov

Govorkov

et al. 2008

J. Electrochem. Soc.

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Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence ͑MCL͒ spectra were measured before and after electron irradiation of n-GaN/InGaN multi-quantum-well ͑MQW͒ structures typical of the active region of GaN/InGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near E c − 1.1 eV and hole traps near E v + 0.9 eV in the GaN barriers and at the GaN/InGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 10 15 cm −2 , while measurable changes in the electrical properties are observed after doses exceeding 10 16 cm −2 electrons.Heterojunctions and quantum wells ͑QWs͒ of GaN and related InGaAlN alloys are of great importance for visible/UV light emitting diodes ͑LEDs͒ and laser diodes ͑LDs͒, 1 high-power/highfrequency/high-temperature field effect and bipolar transistors, 2 and solar-blind photodetectors. 2 For some applications it is essential for the devices to operate in the harsh radiation environment encountered in open-space modules or in military systems. The radiation hardness of GaN-based devices is 1-2 orders of magnitude higher than for their AlGaAs/GaAs counterparts, mainly due to the higher bond strength in GaN, leading to a lower number of primary radiation defects per incident particle. 3-6 The main defects introduced in GaN by electron or proton irradiation are several nitrogen-vacancyrelated or nitrogen interstitial/gallium vacancy-related electron traps with levels ϳ0.13 to 0.2 eV. 7-12 Neutron irradiation was shown to create disordered regions in which the Fermi level is pinned near E c − ͑0.9-1͒ eV. 13 The Fermi level pinning position is believed to be due to nitrogen-interstitial-related deep acceptors near E c − 1 eV and gallium interstitial-related deep donors near E c − ͑0.8-0.9͒ eV. 14 The latter centers were also observed in GaN samples irradiated with high-energy electrons, protons, or heavy ions. [10][11][12][13][14] For GaN/InGaN heterojunctions, QWs, and multiple QWs ͑MQWs͒, data on radiation defects is scarce. Irradiation of single-QW GaN/InGaN blue LEDs with fast neutrons leads to substantial degradation of parameters after the dose of 10 14 n/cm 2 . 15 Proton irradiation of green LEDs resulted in ϳ40% decrease of the light output after irradiation with 1.7 ϫ 10 12 cm −2 of 2 MeV protons. 16,17 The nature of radiation defects in QWs has not been studied in detail, and a better understanding of radiation-damage processes is necessary to optimize device performance. We performed experiments on undoped GaN/InGaN MQW structures mimicking the active layers of GaN/InGaN LEDs. ExperimentalThe MQWs were grown by metallorganic chemical vapor deposition on basal-plane sapphire substrates. The samples consisted of a low-temperature GaN buffe...

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“…It can possibly be attributed to the high residual carrier density over 10 18 / cm 3 in In-rich InGaN well, which is enough density to screen the internal electric field. 14,15 Up to now, most of reported residual carrier density in InN is in the order of 10 18 -10 21 / cm 3 , which is originated from high density of native defects and donor impurities in FIG. 1.…”

Section: Resultsmentioning

confidence: 99%

Optical and microstructural studies of atomically flat ultrathin In-rich InGaN∕GaN multiple quantum wells

Kwon

Kim

Yoon

et al. 2008

Journal of Applied Physics

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Strong potential profile fluctuations and effective localization process in In Ga N Ga N multiple quantum wells grown on { 10 1 m } faceted surface GaN template J. Appl. Phys. 100, 013528 (2006) Optical and microstructural properties of atomically flat ultrathin In-rich ͑UTIR͒ InGaN / GaN multiple quantum well were investigated by means of photoluminescence ͑PL͒, time-resolved PL ͑TRPL͒, and cathodoluminescence ͑CL͒ experiments. The sample exhibits efficient trapping of the photoexcited carriers into quantum wells ͑QWs͒ and the effect of internal electric field in the QWs was found negligible by excitation power-dependent PL and TRPL. These phenomena were attributed to the nature of UTIR InGaN QWs, indicating the potential of this system for application in optoelectronic devices. Variation of TRPL lifetime across the PL band and spatially resolved monochromatic CL mapping images strongly suggest that there is micrometer-scale inhomogeneity in effective band gap in UTIR InGaN / GaN QWs, which is originated from two types of localized areas.

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Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells

Cited by 7 publications

References 12 publications

Deep traps in GaN-based structures as affecting the performance of GaN devices

Deep traps in GaN-based structures as affecting the performance of GaN devices

Electron Irradiation Effects in GaN∕InGaN Multiple Quantum Well Structures

Optical and microstructural studies of atomically flat ultrathin In-rich InGaN∕GaN multiple quantum wells

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