2005
DOI: 10.1143/jjap.44.7055
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Piezoelectric Properties of Vanadium-Substituted Strontium Bismuth Niobate

Abstract: Vanadium-substituted strontium bismuth niobate, SrBi 2 Nb 1:95 V 0:05 O 9 (SBNV), ceramics were synthesized by a lowtemperature process, and the detailed piezoelectric properties of the SBNV ceramics were characterized. Dense SBNV ceramics were obtained at a sintering temperature of 950 C, which is 200 C lower than that for nonsubstituted (SBN) ceramics. With the substitution of vanadium cations for niobium the ferroelectric D-E hysteresis loops were observed at room temperature and the remanent polarization, … Show more

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Cited by 16 publications
(6 citation statements)
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“…However, the piezoactivity of pure BTNO ceramics is quite low (d 33 <7 pC/N) [10] for high temperature applications. The A-site substitution or/and B-site substitution have been shown to be effective in modifying the structure and polarization process [11][12][13][14][15][16][17][18][19][20][21][22][23]. Only a few works have addressed the properties of cation-modified BTNO-based ceramics.…”
Section: Introductionmentioning
confidence: 99%
“…However, the piezoactivity of pure BTNO ceramics is quite low (d 33 <7 pC/N) [10] for high temperature applications. The A-site substitution or/and B-site substitution have been shown to be effective in modifying the structure and polarization process [11][12][13][14][15][16][17][18][19][20][21][22][23]. Only a few works have addressed the properties of cation-modified BTNO-based ceramics.…”
Section: Introductionmentioning
confidence: 99%
“…[12][13][14][15][16] Bi 3 TiNbO 9 (BTNO) with m ¼ 2 that consists of (Bi 2 O 2 ) 2þ layers between which there are (BiTiNbO 7 ) 2À layers is a promising material for fabricating high-temperature piezoelectric sensors because of their very high Curie temperature T C (914-921 ○ C), 5,17 despite the fact that the piezoelectric modulus of BTNO ceramic is fairly low (d 33 < 7 pC/N). 18 Numerous examples [19][20][21][22][23][24][25][26][27][28][29][30][31] showed that replacements of atoms in A and also in B positions of an APs crystal lattice led to the change in the structure, the dielectric properties and significantly influenced the polarization processes in these compounds. In this work, we have synthesized a number of new solid solutions of layered perovskite-like oxides Bi 3Àx Gd x TiNbO 9 (x ¼ 0, 0.1, 0.2, 0.3) in which proportions between amounts of Bi 3þ and Lu 3þ ions entering in position A was varied and have studied their crystal lattices, the dielectric and electrophysical characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…Было показано на многочисленных примерах [19][20][21][22][23][24][25][26][27][28][29][30][31], что замены атомов как в A, так и в B-позициях кристал-лической решетки ФА приводят к изменениям структу-ры, диэлектрических свойств и значительно влияет на поляризационные процессы в этих соединениях.…”
Section: Introductionunclassified