Piezoelectric PZT MEMS technologies for small-scale robotics and RF applications

Pulskamp, Jeffrey S.; Polcawich, Ronald G.; Rudy, Ryan Q.; Bedair, Sarah S.; Proie, Robert M.; Ivanov, Tony; Smith, Gabriel L.

doi:10.1557/mrs.2012.269

Cited by 95 publications

(45 citation statements)

References 27 publications

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“…The growth conditions and thickness of each layer were already reported. [24][25][26] Here, the pseudocubic symmetric index designated as (hkl) c was used for SrRuO 3 and LaNiO 3 .…”

Section: Methodsmentioning

confidence: 99%

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O₃films grown on (100) Si substrates by metal organic chemical vapor deposition

Okada

Krishnan

Okamoto

et al. 2017

Jpn. J. Appl. Phys.

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In-plane orientation-controlled Pb(Zrx,Ti1−x)O3 (PZT) films with a thickness of approximately 2 µm and a Zr/(Zr + Ti) ratio of 0.39–0.65 were grown on (100) Si substrates by pulsed metal–organic chemical vapor deposition (MOCVD). In-plane-oriented epitaxial PZT films and in-plane random fiber-textured PZT films with {100} out-of-plane orientation were grown on (100)c SrRuO3//(100)c LaNiO3//(100) CeO2//(100) YSZ//(100) Si and (100)c SrRuO3/(100)c LaNiO3/(111) Pt/TiO2/SiO2/(100) Si substrates, respectively. The effects of Zr/(Zr + Ti) ratio and in-plane orientation on the crystal structure, dielectric, ferroelectric, and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that the epitaxial PZT films had a higher volume fraction of (100) orientation than the fiber-textured PZT films in the tetragonal Zr/(Zr + Ti) ratio region. A large difference was not detected between the epitaxial films and the fiber-textured films for Zr/(Zr + Ti) ratio dependence of the dielectric constant, and remanent polarization. However, in the rhombohedral phase region [Zr/(Zr + Ti) = 0.65], coercive field was found to be 1.5-fold different between the epitaxial and fiber-textured PZT films. The maximum field-induced strains measured at 0–100 kV/cm by scanning atomic force microscopy were obtained at approximately Zr/(Zr + Ti) = 0.50 and were about 0.5 and 0.3% for the epitaxial and fiber-textured PZT films, respectively.

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“…The growth conditions and thickness of each layer were already reported. [24][25][26] Here, the pseudocubic symmetric index designated as (hkl) c was used for SrRuO 3 and LaNiO 3 .…”

Section: Methodsmentioning

confidence: 99%

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O₃films grown on (100) Si substrates by metal organic chemical vapor deposition

Okada

Krishnan

Okamoto

et al. 2017

Jpn. J. Appl. Phys.

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“…Using a similar analysis as above for evaluating piezoelectric transformer efficiency and incorporating the electrical loss on the input and output ports. The peak efficiency in (13) including the other electrical losses is described by…”

Section: Load Dependence Of Efficiency and Voltage Gain Including mentioning

confidence: 99%

“…Such applications include distributed sensors and portable electronics [1]. Future mobile Microsystems, which are envisioned to range in the cm-scale down [12] to the mmscale [13], are current topics in research motivating both high power-density power sources and vanishingly-small power management units [14]. Such future systems have extreme size, weight and power constraints and motivate complete power supplies at the mm/mg scale.…”

mentioning

confidence: 99%

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Bedair

Pulskamp

Polcawich

et al. 2013

J. Microelectromech. Syst.

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This paper reports the performance of leadzirconate-titanate (PZT)-on-silicon electromechanical resonators as thin-film piezoelectric transformers. The PZT-on-silicon resonators rely on the odd harmonics of the contour lengthextensional modes to provide a convenient means for voltage and current transformations with a single layer of piezoelectric PZT. The resistive-load-dependent voltage gains and efficiencies are derived along with the peak efficiencies and open circuit voltage gains. The models of efficiency and voltage gain are compared to the experimental measurements of fabricated PZTon-silicon piezoelectric transformers with 2, 4, and 10 μm of device silicon. The resonant frequencies of the devices range between 14 and 19 MHz. Peak efficiencies as high as 62% are measured and open circuit voltage gains as high as 5.7 are extracted from the measurements. The measured efficiencies with 50-loads compare within 14% of the models on average (25% peak error). The extracted open-circuit voltage gains and their models compare within 22% on average (67% peak error). The trade between the load-dependent efficiencies and voltage gains are also presented for the n =3, 5, 9, and 13 harmonics. [2012-0339]

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“…Applications motivating this research area include point-of-load converters in microprocessors [2], inverters for solid-state lighting and solar-energy harvesting, as well as power management for wearable energy harvesters and future micro-autonomous / micro-robotics systems technologies [3,4]. These applications need power management units with large power densities and motivate high inductance and / or capacitance density power passives, components typically limiting the size / volume of the converter.…”

Section: Introductionmentioning

confidence: 99%

Thin-film piezoelectric transformers operating in harmonics of out-of-plane flexure modes

Bedair¹,

Pulskamp²,

Polcawich³

et al. 2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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This paper documents disc-shaped flexure-mode piezoelectric transformers constructed with 0.5 μm leadzirconate-titanate (PZT) on 4-μm silicon resonators. The transformers are electrode shaped to excite out-of-plane flexure modes at ~12, ~34, and ~63 MHz.The incorporation of silicon enables the excitation of out-ofplane flexural modes which exploit large quasi-static material coupling factors (using both e 31 and e 32 ).

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Piezoelectric PZT MEMS technologies for small-scale robotics and RF applications

Abstract: Abstract

Cited by 95 publications

References 27 publications

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O₃films grown on (100) Si substrates by metal organic chemical vapor deposition

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O₃films grown on (100) Si substrates by metal organic chemical vapor deposition

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Thin-film piezoelectric transformers operating in harmonics of out-of-plane flexure modes

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Piezoelectric PZT MEMS technologies for small-scale robotics and RF applications

Abstract: Abstract

Cited by 95 publications

References 27 publications

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3films grown on (100) Si substrates by metal organic chemical vapor deposition

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3films grown on (100) Si substrates by metal organic chemical vapor deposition

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Thin-film piezoelectric transformers operating in harmonics of out-of-plane flexure modes

Contact Info

Product

Resources

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In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O₃films grown on (100) Si substrates by metal organic chemical vapor deposition

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O₃films grown on (100) Si substrates by metal organic chemical vapor deposition