This review article presents recent advancements in the design and fabrication of thin‐film (<3 μm) lead zirconate titanate (PZT) microelectromechanical system (MEMS) devices. The article covers techniques for optimizing highly (001)/(100) oriented chemical solution deposited PZT films to achieve improved piezoelectric coefficients. These PZT films combined with surface and bulk micromachining techniques are fabricated into actuators and transducers for radio frequency (RF) switches, nanomechanical logic, resonators, and power transformers for use in communication systems and phased‐array radar. In addition, the large relative displacements generated by PZT thin films have been used to demonstrate mechanical mobility in MEMS devices, including insect‐inspired flight actuators and ultrasonic traveling wave motors. In conjunction with actuation, PZT films are being developed for feedback sensors for the integrated control of insect‐inspired robots.

Silicon dioxide thin film is a common component in electronic devices and in MEMS, but its mechanical properties have rarely been studied. Techniques have been adapted and developed to conduct tensile tests on 1.0 μm thick silicon dioxide specimens that are 100, 150, and 200 μm wide and either 1 or 2 mm long. One end of the specimen remains fastened to the substrate, and the other is glued to a silicon carbide fiber attached to a 30 g load cell mounted on a piezoelectric translation stage. Strain is measured by digital imaging of two gold lines applied to the gage section of the transparent specimen. Twenty-five tests yield a Young's modulus of 60.1±3.4 GPa and a fracture strength of 364±57 MPa.

A new microscale uniaxial tension experimental method was developed to investigate the strain rate dependent mechanical behavior of freestanding metallic thin films for MEMS. The method allows for highly repeatable mechanical testing of thin films for over eight orders of magnitude of strain rate. Its repeatability stems from the direct and full-field displacement measurements obtained from optical images with at least 25 nm displacement resolution. The method is demonstrated with micron-scale, 400-nm thick, freestanding nanocrystalline Pt specimens, with 25 nm grain size. The experiments were conducted in situ under an optical microscope, equipped with a digital high-speed camera, in the nominal strain rate range 10 −6 -10 1 s −1 . Full field displacements were computed by digital image correlation using a random speckle pattern generated onto the freestanding specimens. The elastic modulus of Pt, E=182±8 GPa, derived from uniaxial stress vs. strain curves, was independent of strain rate, while its Poisson's ratio was v=0.41± 0.01. Although the nanocrystalline Pt films had the elastic properties of bulk Pt, their inelastic property values were much higher than bulk and were rate-sensitive over the range of loading rates. For example, the elastic limit increased by more than 110% with increasing strain rate, and was 2-5 times higher than bulk Pt reaching 1.37 GPa at 10 1 s −1 .

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