Strain Measurements of Silicon Dioxide Microspecimens by Digital Imaging Processing

Sharpe, W. N.; Pulskamp, Jeffrey S.; Gianola, Daniel S.; Eberl, C.; Polcawich, Ronald G.; Thompson, Richard J.

doi:10.1007/s11340-006-9010-z

Cited by 131 publications

(64 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Annealing at temperatures in excess of 600°C is sufficient to remove the incorporated hydrogen, 10,17 after which the film experiences tensile stress as the silica network relaxes. Experimental measurements of the fracture strength of PECVD silica films 18 indicate stresses in excess of 360 MPa are sufficient to cause fracture of thick ͑1 m͒ films. The problem becomes increasingly severe as the SiO x films are made thicker ͑higher stress buildup͒ or more Si-rich ͑the higher silane fluence during growth results in more hydrogen and more stress͒.…”

Section: Introductionmentioning

confidence: 99%

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Ahmad

Temple

Kallis

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.

show abstract

Section: Introductionmentioning

confidence: 99%

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Ahmad

Temple

Kallis

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The elastic modulus evaluated directly from the stress-strain curve is ~88.5 GPa, which is comparable to similar BMGs Zr48Cu48Al4 [20] and Zr48Cu45Al7 [17]. Regarding the scattering fracture strength value (Figure 4), the logarithmic normal distribution method is introduced to describe brittle materials, and the cumulative probability function is shown as [21] …”

Section: Resultsmentioning

confidence: 65%

Tensile Strength Reliability Analysis of Cu48Zr48Al4 Amorphous Microwires

Sun

Ning

Wang

et al. 2016

Metals

View full text Add to dashboard Cite

Uniform Cu 48 Zr 48 Al 4 amorphous microwires with a high surface quality are fabricated by a melt extraction technique. The mechanical property of microwires is evaluated via tensile tests. To estimate the strength scattering, statistical analysis of fracture strengths is conducted using logarithmic normal distribution, and two-and three-parameter Weibull analysis, severally. The results show that the tensile strengths of Cu 48 Zr 48 Al 4 amorphous microwires range from 1724 to 1937 MPa with the arithmetical average value of 1836 MPa, and the arithmetical standard deviation of 56.4 MPa. The geometric mean of fracture strength is 1840 MPa using logarithmic normal distribution statistical analysis. Using two-and three-parameter Weibull analysis, the Weibull modulus and fracture threshold value are respectively calculated for 34.8 and 1483 MPa, which shows the excellent tensile mechanical properties with a high predictability of Cu 48 Zr 48 Al 4 amorphous microwires and further indicates the great potential of application.

show abstract

“…We employed digital image correlation (DIC) of SEM images captured during in situ deformation experiments to calculate the local strain in the specimen. This technique, commonly applied to macroscale testing, [83][84][85][86][87][88] has recently been extended to the micro-and nanoscale where conventional imaging schemes are replaced by SEM, 36,[89][90][91][92] FIB, 35 and AFM (Ref. 32) platforms.…”

Section: Local Strain Measurementmentioning

confidence: 99%

In situ nanomechanical testing in focused ion beam and scanning electron microscopes

Gianola

Sedlmayr

Mönig

et al. 2011

Review of Scientific Instruments

Self Cite

View full text Add to dashboard Cite

The recent interest in size-dependent deformation of micro-and nanoscale materials has paralleled both technological miniaturization and advancements in imaging and small-scale mechanical testing methods.Here we describe a quantitative in situ nanomechanical testing approach adapted to a dualbeam focused ion beam and scanning electron microscope. A transducer based on a three-plate capacitor system is used for highfidelity force and displacement measurements. Specimen manipulation, transfer, and alignment are performed using a manipulator, independently controlled positioners, and the focused ion beam. Gripping of specimens is achieved using electron-beam assisted Pt-organic deposition. Local strain measurements are obtained using digital image correlation of electron images taken during testing. Examples showing results for tensile testing of single-crystalline metallic nanowires and compression of nanoporous Au pillars will be presented in the context of size effects on mechanical behavior and highlight some of the challenges of conducting nanomechanical testing in vacuum environments. The recent interest in size-dependent deformation of micro-and nanoscale materials has paralleled both technological miniaturization and advancements in imaging and small-scale mechanical testing methods. Here we describe a quantitative in situ nanomechanical testing approach adapted to a dualbeam focused ion beam and scanning electron microscope. A transducer based on a three-plate capacitor system is used for high-fidelity force and displacement measurements. Specimen manipulation, transfer, and alignment are performed using a manipulator, independently controlled positioners, and the focused ion beam. Gripping of specimens is achieved using electron-beam assisted Pt-organic deposition. Local strain measurements are obtained using digital image correlation of electron images taken during testing. Examples showing results for tensile testing of single-crystalline metallic nanowires and compression of nanoporous Au pillars will be presented in the context of size effects on mechanical behavior and highlight some of the challenges of conducting nanomechanical testing in vacuum environments. Disciplines Engineering | Materials Science and Engineering Comments

show abstract

Strain Measurements of Silicon Dioxide Microspecimens by Digital Imaging Processing

Cited by 131 publications

References 28 publications

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Tensile Strength Reliability Analysis of Cu48Zr48Al4 Amorphous Microwires

In situ nanomechanical testing in focused ion beam and scanning electron microscopes

Contact Info

Product

Resources

About