Piezoelectric ultrathin lead titanate films prepared by deposition of aquo-diol solutions

Ricote, J.; Holgado, S.; Ramos, P.; Calzada, M. L.

doi:10.1109/tuffc.2006.177

Cited by 13 publications

(12 citation statements)

References 23 publications

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“…In addition, they are also viable functional materials for neuromorphic synapse circuits where more analogue type data processing is necessary (3). Recently, their high electromechanical coefficients have provided micro-and nanoelectromechanical systems with new opportunities (4). In addition, they have attracted considerable attention for applications to ferroelectric tunnel junctions, ferroelectric Schottky diodes and resistive switching memory.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

2009

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PbTiO 3 thin films were deposited on Si and Ru substrates by atomic layer deposition (ALD) at a substrate temperature of 200 o C using H 2 O and O 3 as oxidants. When H 2 O was used as the oxidant for both Pb-and Ti-precursors, film growth was most effective under the PbO vs. TiO 2 growth cycle ratio where stoichiometry (Pb/Ti concentration ratio = 1) of the film could be achieved. The previously reported catalytic effect observed in the PbTiO 3 ALD process was attributed to the enhanced growth of the component oxide layer, i.e. PbO and TiO 2 , by previously formed stoichiometric PbTiO 3 phase. On the other hand, when H 2 O and O 3 were used for Pb-and Ti-precursors, respectively, the growth rate increased with increasing PbO vs. TiO 2 growth cycle ratio. This was attributed to the effects of O 3 used for the Ti-precursor on the adsorption of Pb-precursor during the subsequent PbO growth step.

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Section: Introductionmentioning

confidence: 99%

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

2009

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“…[3] Recently, their high electromechanical coefficients have provided micro-and nano-electromechanical systems with a new opportunity. [4] The great functional opportunities of FE materials have led to renewed interest from industry and theoreticians in determining the limitations in the vertical and lateral sizes of FE materials. Although first-principle calculations [5] in combination with experimental observations [6] have shown that it is possible to scale down the thickness to a few unit cells while maintaining the functionality of FE materials, the real situation has not been so promising.…”

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confidence: 99%

The Inlaid Al₂O₃ Tunnel Switch for Ultrathin Ferroelectric Films

et al. 2009

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Ferroelectricity is an intriguing property of some materials that belong to certain non-centrosymmetric crystal groups. Ferroelectric (FE) materials show a residual surface ionic charge, called remanent polarization (P r ), even under the absence of an external electric field. The sign of Pr can be reversed by reversing the external electric field. This is a very attractive characteristic for nonvolatile semiconductor memory devices, where the bistable charge states correspond to digital 0 and 1 data. [1,2] In addition, they are also viable functional materials for neuromorphic synapse circuits, where more analogue-type data processing is necessary.[3] Recently, their high electromechanical coefficients have provided micro-and nano-electromechanical systems with a new opportunity.[4] The great functional opportunities of FE materials have led to renewed interest from industry and theoreticians in determining the limitations in the vertical and lateral sizes of FE materials. Although first-principle calculations [5] in combination with experimental observations [6] have shown that it is possible to scale down the thickness to a few unit cells while maintaining the functionality of FE materials, the real situation has not been so promising. In most semiconductordevice applications, FE materials should be integrated with the standard complementary metal oxide semiconductor field effect transistor so that they are formed during the back-end of the line process. This means that FE materials should have metal (or conducting oxide) electrodes and a polycrystalline thin-film structure, which is a very different situation from what the theoretical calculations have assumed. Due to this harsh environment, FE materials suffer from interfacial effects, including either the intrinsic finite electrostatic screening length of the metal electrodes, [7][8][9][10] and a finite intrinsic dead layer, or the processing issues of an intervening defect, phase impurities, and residual stresses. [11][12][13][14] Even when all extrinsic effects are minimized by technological improvements, intrinsic by-electrode effects generate a considerably large depolarizing field to destabilize the single-domain pattern within a single memory cell into 180 8/90 8 stripe domains, which reduces the equilibrium system energy. [6,15,16] These effects become increasingly severe as the FE layer-thickness decreases, rendering ultrathin FE film applications virtually impractical. Furthermore, the length of accessing the write/read pulses of the memory devices should be longer than the actual domain switching time for operation safety. This arouses various reliability issues, such as imprint and fatigue, due to by-electrode charge injection during field overstressing. [17,18] It has been confirmed experimentally that there are normally non-ferroelectric interfacial layers at the interfaces between (metal) electrodes and FE layer that have detrimental effects on the FE functionality of thin films. On the other hand, it is possible that this interfacial layer ca...

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“…The possibility of depositing functional metal oxide films with thickness below 30 nm by non-aqueous chemical solution deposition (CSD) methods has been shown simultaneously with our work e.g. ultrathin piezoelectric PbTiO 3 (down to 13 nm) [5] or sol-gel derived HfO 2 (20 nm) [6].…”

Section: Introductionmentioning

confidence: 61%

Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application

et al. 2008

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Zirconia ultrathin films were deposited by aqueous chemical solution deposition, using citratoperoxo-Zr(IV) precursors with different citric acid content. The precursor synthesis, thermal decomposition and crystallization of oxide powders was studied. This showed an effect of the citric acid content in every stage. The precursors were applied for the deposition of uniform, ultrathin films (< 30 nm thickness) as well. Tetragonal ZrO 2 crystallized starting from 500°C for thin films with a thickness of 10 nm. This was independent of the citric acid content in the precursor. The topography after annealing at 600°C was also similar. However, annealing at higher temperatures led to coarser grain size. The dielectric constant was high (~21-22) and comparable to ZrO 2 deposited by atomic layer deposition.

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Piezoelectric ultrathin lead titanate films prepared by deposition of aquo-diol solutions

Cited by 13 publications

References 23 publications

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

The Inlaid Al₂O₃ Tunnel Switch for Ultrathin Ferroelectric Films

Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application

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Piezoelectric ultrathin lead titanate films prepared by deposition of aquo-diol solutions

Cited by 13 publications

References 23 publications

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films

Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application

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The Inlaid Al₂O₃ Tunnel Switch for Ultrathin Ferroelectric Films