Piezoelectricity in ferroelectric thin films: Domain and stress issues

Trolier‐McKinstry, Susan; Shepard, J.; Lacey, J.; Su, Tao; Zavala, Genaro; Fendler, János H.

doi:10.1080/00150199808009171

Cited by 38 publications

(12 citation statements)

References 20 publications

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“…We note that experimentally PZT films on Si substrates contain polydomain microstructures that form so as to relax thermal stresses due to the TEC mismatch and the transformational stresses due to the FE-PE phase transformation at T C . [59][60][61][62][63][64][65][66] Several studies have been reported which provide a rigorous analysis of polydomain heterostructures in epitaxial FEs taking into account these (volumetric) sources of internal stresses as well as localized strain fields near defects using thermodynamic models and phase-field approaches. 20,55,67,68 Therefore, to describe the experimental observations, more sophisticated models need to be developed to describe the effect of grain and domain boundaries, grain texture, and the extrinsic contribution to the pyroelectric coefficient resulting from reversible domain wall motion.…”

Section: Resultsmentioning

confidence: 99%

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

Kesim

Zhang

Trolier-McKinstry

et al. 2013

Journal of Applied Physics

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Author(s)Kesim, M. T.; Zhang, J.; Trolier-McKinstry, S.; Mantese, J. V.;Whatmore, Roger W.; Alpay, S. P. Ferroelectric lead zirconate titanate [Pb(Zr x Ti 1-x O) 3 , (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25-800 C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042 lC cm À2 C Publication date 2013 Original citation À1, comparable to bulk values) at a growth temperature of 550 C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process. V C 2013 AIP Publishing LLC. [http://dx

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Section: Resultsmentioning

confidence: 99%

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

Kesim

Zhang

Trolier-McKinstry

et al. 2013

Journal of Applied Physics

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“…In contrast, for subcoercive electric field excitations, low levels of ferroelastic domain wall mobility are reported for applied dc stresses for several perovskite ferroelectric films [42][43][44]. In most cases, comparatively low levels of non-180°domain wall motion (certainly well below those shown by bulk ceramics of the same composition) can be driven by ac electric fields alone in films under a micron in thickness [45,46]. Similar conclusions have been drawn for SrBi 2 Ta 2 O 9 films [47].…”

Section: Introductionmentioning

confidence: 90%

Domain wall contributions to the properties of piezoelectric thin films

et al. 2007

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In bulk ferroelectric ceramics, extrinsic contributions associated with motion of domain walls and phase boundaries are a significant component of the measured dielectric and piezoelectric response. In thin films, the small grain sizes, substantial residual stresses, and the high concentration of point and line defects change the relative mobility of these boundaries. One of the consequences of this is that thin films typically act as hard piezoelectrics. This paper reviews the literature in this field, emphasizing the difference between the nonlinearities observed in the dielectric and piezoelectric properties of films. The effect of ac field excitation levels, dc bias fields, temperature, and applied mechanical stress are discussed.

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“…As a consequence these materials, in thin film form, have attracted a lot of attention in the past few years; many research have been developed on the growth by different approach (laser ablation, sol-gel, sputtering,) and characterization of thin films [1][2][3]. One of the most studied relaxor ferroelectric material is lead magnesium niobate Pb(Mg 1/3 Nb 2/3 )O 3 (PMN); a solid solution can be obtained when PbTiO 3 (PT) is added.…”

Section: Introductionmentioning

confidence: 99%