Piezoelectricity, thermal stability, and fatigue resistance in Nb and Ta-doped Bi4Ti3O12 high-temperature piezoceramics

Jeong, Yun-Gi; Lee, Gyoung-Ja; Lee, Sang-Hyeop; Ma, Hee-Seung; Kim, Byung–Hoon; Park, Kyu Hyun; Park, Jin Ju; Lee, Kyubock; Lee, Min Ku

doi:10.1016/j.ceramint.2022.01.146

Cited by 20 publications

(7 citation statements)

References 42 publications

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“…With the temperature further increasing to near T c , the d 33 value fell sharply due to the depoling processes caused by oxygen vacancies that became more easily displaced towards the domain wall as the temperature increased, and hard to return to the initial poled state after cooling to room temperature. 26 The f r and f a presented a slight frequency shift with the increase of the temperature, indicating good temperature stability. It was also found that the significant f r shift would make piezoelectric ceramic unable to output the maximum power at its original f r .…”

Section: Resultsmentioning

confidence: 93%

“…Pb(Zn 1/3 Nb 2/3 )O 3 -Pb(Mn 1/3 Nb 2/3 )O 3 -Pb(Zr,Ti)O 3 quaternary ceramics featuring both "soft" and "hard" properties are suitable for fabricating high-power piezoelectric ceramics. 14,26 Fe 2 O 3 is an acceptor dopant and can also act as an excellent sintering aid that suppresses the restrictive relationship between "soft" and "hard" properties by improving the sintering quality of PZT ceramics. 3,6,27 Herein, the high-power performance of PZMNZT-xFe ceramics was studied in detail, and the PZMNZT−0.15Fe ceramic with good high-power performance was found promising for high-power applications.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced high‐power performance of Fe‐doped PZMNZT piezoelectric ceramics

et al. 2023

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High‐power piezoelectric ceramics are typically driven to output vibration velocity (v0) under high AC electric fields. Herein, the Fe2O3 doped 0.125 Pb(Zn1/3Nb2/3) O3–0.075 Pb(Mn1/3Nb2/3)O3–0.8 Pb(Zr0.48Ti0.52)O3(PZMNZT–xFe; x = 0.05–0.35) piezoelectric ceramics were prepared to enhance v0, and the favorable comprehensive electrical properties, such as d33 = 315 pC/N, Qm = 1738, kp = 0.58, kt = 0.48, εr = 1156, tan δ = 0.4%, and Tc = 320°C, were achieved in the PZMNZT–0.15Fe ceramic. Most importantly, the PZMNZT–0.15Fe ceramic presented a reliable v0 of 0.90 m/s, which was 2.25 times of the commercial PZT4 ceramic (∼0.40 m/s). The excellent high‐power performance should be attributed to ordering functional elements such as crystal grains and ferroelectric domains. Overall, this work reveals that the PZMNZT–0.15Fe ceramic is competitive for high‐power applications.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Enhanced high‐power performance of Fe‐doped PZMNZT piezoelectric ceramics

et al. 2023

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“…In addition, the (013)CBN film exhibits excellent strain property. Because almost no strain has been reported in Aurivillius-type piezoelectric films, we compares the strain performance of the (013)CBN film with typical Aurivillius-type piezoelectric ceramics as shown in Figure . − It can be found that the strain of the (013)CBN film is much higher than that of other Aurivillius-type piezoelectric ceramics. And its strain is comparable to those of BNT, PMNPT, and KNN based films reported in the literature. − Therefore, it provides a piezoelectric film with great potential for the development of high-temperature (>500 °C) piezoelectric MEMS devices.…”

Section: Resultsmentioning

confidence: 99%

Significantly Enhanced Electrostrain in Oriented Epitaxial Self-Assembled Aurivillius-Type Piezoelectric Films via Regulating Polarization Vectors

Hao

Ju³

et al. 2023

ACS Appl. Mater. Interfaces

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High-temperature piezoelectric films with excellent piezoelectric and ferroelectric properties lay the foundation for the development of high-temperature piezo-MEMS devices. However, due to the poor piezoelectricity and strong anisotropy, it remains a challenge to obtain high quality Aurivillius-type high-temperature piezoelectric films with high performance, which impedes their practical implements. Here, a feasible polarization vector regulation strategy associated with oriented epitaxial self-assembled nanostructures for enhancing electrostrain is proposed. Guided by lattice matching relation, non-c-axis oriented epitaxial self-assembled Aurivillius-type calcium bismuth niobate (CaBi2Nb2O9, CBN) high-temperature piezoelectric films were successfully prepared on different oriented Nb-STO substrates. By the lattice matching relationship, hysteresis measurement, and piezoresponse force microscopy analysis, it is confirmed that the polarization vectors transform from a two-dimensional plane to a three-dimensional space, and the out-of-plane polarization switching is enhanced. A platform for more possible polarization vectors is provided in the self-assembled (013)CBN film. More importantly, enhanced ferroelectric (P r ∼ 13.4 μC/cm2) and large strain (∼0.24%) were obtained in the (013)CBN film, which promotes the great application prospect of CBN piezoelectric films in high-temperature MEMS devices.

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“…The tungsten bronze structure material (A x Sr 1– x NaNb 5 O 15 ) obtains an ultrahigh T c above 800°C, but inferior piezoelectric coefficients of 5 pC/N limit its practical application 10 . Nevertheless, bismuth‐layered piezoelectric ceramics obtaining piezoelectric coefficients of 20 pC/N while maintaining a high Curie temperature ( T > 600°C) are considered to be a good choice to supplement lead‐based piezoelectric perovskite materials for application in extremely high‐temperature environments 11–13 …”

Section: Introductionmentioning

confidence: 99%

“…10 Nevertheless, bismuth-layered piezoelectric ceramics obtaining piezoelectric coefficients of 20 pC/N while maintaining a high Curie temperature (T > 600 • C) are considered to be a good choice to supplement lead-based piezoelectric perovskite materials for application in extremely high-temperature environments. [11][12][13] The chemical formula of bismuth-layered ferroelectrics (BLSF) is (Bi 2 O 2 ) 2+ (A m-1 B m O 3m+1 ) 2-, and the A-site cations usually form coordination dodecahedrons with a valence between +1 and +4, while the B-site cations often construct octahedron structures with a valence between +3 and +5. 14,15 In addition, the (Bi 2 O 2 ) 2+ bismuth oxygen layers and the (A m-1 B m O 3m+1 ) 2perovskite layers are arranged alternately in different orders.…”

Section: Introductionmentioning

confidence: 99%

Enhanced piezoelectric performance in Na_0.5Bi_4.5Ti₄O₁₅‐based bismuth‐layered ceramics by Nb/Mn doping modification

Luo

Zhang

et al. 2022

J Am Ceram Soc.

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In this work, Na0.5Bi4.5Ti3.94–xMn0.06NbxO15+y bismuth‐layered ferroelectric ceramics were prepared by a solid‐state reaction method. The effect of Nb5+ content on crystal morphology, electrical properties, and piezoelectric performance were systematically investigated. The results show that the introduction of Nb5+ into Na0.5Bi4.5Ti3.94–xMn0.06NbxO15+y ceramics to replace Ti4+ increases the ratio of b/a lattice parameter, leading to the TiO6 octahedral distortion and the structural transformation tendency from the orthorhombic to tetragonal phase, which facilitates dipole movements of Na0.5Bi4.5Ti3.94–xMn0.06NbxO15+y ceramics. Therefore, the ferroelectric properties of Na0.5Bi4.5Ti3.94–xMn0.06NbxO15+y ceramics are improved, and an enhanced piezoelectric coefficient of 30 pC/N combining great temperature stability with d33 value higher than 25 pC/N in the temperature range of 25°C–450°C has been realized in Na0.5Bi4.5Ti3.94–xMn0.06NbxO15+y ceramics with x = 0.08 mol. Our work provides a good model for designing lead‐free ultrahigh Curie temperature piezoelectric devices that can be practically applied in extremely harsh environments.

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Piezoelectricity, thermal stability, and fatigue resistance in Nb and Ta-doped Bi4Ti3O12 high-temperature piezoceramics

Cited by 20 publications

References 42 publications

Enhanced high‐power performance of Fe‐doped PZMNZT piezoelectric ceramics

Enhanced high‐power performance of Fe‐doped PZMNZT piezoelectric ceramics

Significantly Enhanced Electrostrain in Oriented Epitaxial Self-Assembled Aurivillius-Type Piezoelectric Films via Regulating Polarization Vectors

Enhanced piezoelectric performance in Na_0.5Bi_4.5Ti₄O₁₅‐based bismuth‐layered ceramics by Nb/Mn doping modification

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Piezoelectricity, thermal stability, and fatigue resistance in Nb and Ta-doped Bi4Ti3O12 high-temperature piezoceramics

Cited by 20 publications

References 42 publications

Enhanced high‐power performance of Fe‐doped PZMNZT piezoelectric ceramics

Enhanced high‐power performance of Fe‐doped PZMNZT piezoelectric ceramics

Significantly Enhanced Electrostrain in Oriented Epitaxial Self-Assembled Aurivillius-Type Piezoelectric Films via Regulating Polarization Vectors

Enhanced piezoelectric performance in Na0.5Bi4.5Ti4O15‐based bismuth‐layered ceramics by Nb/Mn doping modification

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Enhanced piezoelectric performance in Na_0.5Bi_4.5Ti₄O₁₅‐based bismuth‐layered ceramics by Nb/Mn doping modification