Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates

Su, Yan–Kuin; Wu, Chien-Hung; Huang, Y. S.; Hsu, Hung-Pin; Chen, W. C.; Hsu, Shu-Hau; Chang, Shoou–Jinn

doi:10.1016/j.jcrysgro.2004.01.024

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Optical properties of lattice matched In_xGa_1–xP_1–yN_y heteroepitaxial layers on GaP

Imanishi

Wakahara

Kim

et al. 2005

Physica Status Solidi (a)

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Optical constants and band structure of InxGa1–xP1–yNy lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X‐ray diffraction and X‐ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E0 (Γv to Γc), E1 (Lv to Lc) and E2 (Xv to Xc) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, EPL, and E0 shift to lower energy, and the energy difference ΔE = E0 – EPL decrease from 380 meV to 110 meV. The large red‐sift of EPL from the E0 suggest that the luminescence is of defect‐related luminiscence, and crossover point of indirect band structure estimated by the extrapolation of N‐composition dependence of ΔE is estimated to be arroud in In0.1Ga0.9P0.96N0.04. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optical properties of lattice matched In_xGa_1–xP_1–yN_y heteroepitaxial layers on GaP

Imanishi

Wakahara

Kim

et al. 2005

Physica Status Solidi (a)

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show abstract

Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs

Buyanova¹,

Chen²

Dilute III-V Nitride Semiconductors and Material Systems

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Effect of carrier localization on modulation mechanism in photoreflectance of InGaPN

Lin

Wang

Hwang

2008

Physica E: Low-dimensional Systems and Nanostructures

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Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates

Cited by 5 publications

References 21 publications

Optical properties of lattice matched In_xGa_1–xP_1–yN_y heteroepitaxial layers on GaP

Optical properties of lattice matched In_xGa_1–xP_1–yN_y heteroepitaxial layers on GaP

Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs

Effect of carrier localization on modulation mechanism in photoreflectance of InGaPN

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Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates

Cited by 5 publications

References 21 publications

Optical properties of lattice matched InxGa1–xP1–yNy heteroepitaxial layers on GaP

Optical properties of lattice matched InxGa1–xP1–yNy heteroepitaxial layers on GaP

Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs

Effect of carrier localization on modulation mechanism in photoreflectance of InGaPN

Contact Info

Product

Resources

About

Optical properties of lattice matched In_xGa_1–xP_1–yN_y heteroepitaxial layers on GaP

Optical properties of lattice matched In_xGa_1–xP_1–yN_y heteroepitaxial layers on GaP