2011
DOI: 10.1109/ted.2011.2164923
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Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates

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Cited by 72 publications
(52 citation statements)
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“…S25 (pressure applied locally on the device). The value of G extracted in this manner for the case of R 0 = 29.3 kilohms is in the range of ~50, comparable to intrinsic values expected for boron-doped silicon (2, 41). …”
Section: Methodssupporting
confidence: 74%
“…S25 (pressure applied locally on the device). The value of G extracted in this manner for the case of R 0 = 29.3 kilohms is in the range of ~50, comparable to intrinsic values expected for boron-doped silicon (2, 41). …”
Section: Methodssupporting
confidence: 74%
“…3 A and B, SI Appendix, and SI Appendix, Fig. S7) Information on related flexible devices appears elsewhere (50). Mounting such strain-sensing webs on ∼0.3-mm-thick silicone substrates finalizes the fabrication (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…This resistance sensitivity to strain makes the cracked Ti film on PDMS substrate applicable to a strain sensor that can operate in the high- and broad-strain range. In this case, the sample gives the normalized resistance change to the unit strain change (so-called gauge factor), ∆ R /( R 0 · ∆ ϵ ) = 2.0, which is comparable to the values of conventionally used metals such as Cu, constantan, and Ag [10,25,26]. In contrast to the conventional strain-sensing materials of which ultimate strain is limited to <1%, the cracked Ti film on the elastomeric substrate shows much higher strain tolerances up to 50% and a broader sensing range of 30 to 50%.…”
Section: Resultsmentioning
confidence: 96%