2009
DOI: 10.1016/j.solmat.2009.01.024
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pin double-heterojunction thin-film solar cell p-layer assessment

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Cited by 38 publications
(22 citation statements)
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“…Schematic band diagrams of the Mo/MoS 2 /CZTS and Mo/MoSe 2 /CZTSe back junctions proposed based on literature data are depicted in figures 3(a) and (b). Since energy level alignments derived from employing the simple electron affinity rule are in general not reliable [92], both band diagrams have been constructed using the best available estimates for the potential barrier at the Mo/Mo(S, Se) 2 interface and for the valence band offsets (VBO) at the Mo(S, Se) 2 /kesterite interface. Lacking any direct measurements of the energy level alignment at the back contact/kesterite interface, the estimates are derived using the fact that, according to ab initio calculations, E V (CZTSe)−E V (CIGSe)=0.08 eV [93], where E v is the energy of the valence band maximum.…”
Section: Electrical Properties Of the Back Contactmentioning
confidence: 99%
“…Schematic band diagrams of the Mo/MoS 2 /CZTS and Mo/MoSe 2 /CZTSe back junctions proposed based on literature data are depicted in figures 3(a) and (b). Since energy level alignments derived from employing the simple electron affinity rule are in general not reliable [92], both band diagrams have been constructed using the best available estimates for the potential barrier at the Mo/Mo(S, Se) 2 interface and for the valence band offsets (VBO) at the Mo(S, Se) 2 /kesterite interface. Lacking any direct measurements of the energy level alignment at the back contact/kesterite interface, the estimates are derived using the fact that, according to ab initio calculations, E V (CZTSe)−E V (CIGSe)=0.08 eV [93], where E v is the energy of the valence band maximum.…”
Section: Electrical Properties Of the Back Contactmentioning
confidence: 99%
“…6 These materials have potential applications in different technological fields such as transparent electronics, 7 thermoelectrics, 8 optoelectronics, 9 and photovoltaics. 10 In this paper, we present a detailed experimental and theoretical study of the electronic and optical properties of one family in this group, Ba-based chalcogenide-fluorides BaCuChF ͑Ch =S,Se,Te͒ and their solid solutions, which show p-type conductivity, wide direct optical band gaps, and room temperature excitons. The structural anisotropy of BaCuChF gives rise to anisotropic effective masses of electrons and holes, and to large exciton reduced masses ͑0.90m e and 0.80m e in BaCuSF and BaCuSeF respectively, compared to 0.058m e in GaAs͒, which lead to large exciton binding energies ͑95 meV and 65 meV, compared to 4.2 meV in GaAs͒.…”
Section: Introductionmentioning
confidence: 99%
“…These nanotubes and nanowires can be used in pore filling due to their open porous structures. Moreover, they are reported to be better in electron transportation and recombination behavior and hole conductors presenting faster recombination than nanoparticulate films in liquidbased DSSCs [73][74][75].…”
Section: Photoanodesmentioning
confidence: 99%