Pirani pressure sensor for smart wafer-level packaging

Mailly, F.; Dumas, Norbert; Pous, Nicolas; Latorre, Laurent; Garel, Olivier; Martincic, Émile; Verjus, Fabrice; Pellet, Claude; Dufour-Gergam, Elisabeth; Nouet, Pascal

doi:10.1016/j.sna.2009.02.013

Cited by 22 publications

(6 citation statements)

References 15 publications

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“…When the pressure increased three decades, the response time just changes 5.63%. Lower pressure means lower heat conductivity of the gas due to (3), which makes it faster to accumulate enough heat to become stable in temperature. Obviously, when the pressure increases, it takes more time to gain enough heat for stabilization.…”

Section: ) Responsementioning

confidence: 99%

Single-Walled Carbon Nanotube Pirani Gauges Prepared by DEP Assembly

Zhang

2013

IEEE Trans. Nanotechnology

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This paper reports the design, fabrication, and characteristics of the single-walled carbon nanotubes (SWNTs) Pirani gauge fabricated by dielectrophoretic assembly first which requires simple equipments and process, costs little, and operates at room temperature without limitation on the materials of electrode and substrate. Its theory and design were described in detail. The characteristics were measured and analyzed systematically such as current-voltage, resistance-temperature, thermal response, resistance-pressure, and power consumption properties. The results show that this SWNTs Pirani gauge has rapid thermal response of milliseconds and can operate at very low power consumption down to 15 nW. It reveals a wide linear dynamic range from 0.8 to 80 000 Pa and high sensitivity about 8 kΩ/Pa on average.

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Section: ) Responsementioning

confidence: 99%

Single-Walled Carbon Nanotube Pirani Gauges Prepared by DEP Assembly

Zhang

2013

IEEE Trans. Nanotechnology

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“…A 400 nm gap size is chosen because a smaller gap size will increase the transition pressure according to (1) and this dimension is easily achievable by using a polyimide sacrificial layer. Based on [17], the order of magnitude of P 0 to expect for such a Pirani resistor with an 8 μm width (the smallest dimension of the resistor metal mask used) is ∼289 Torr. This calculated pressure value is higher than the sealing pressure during the sealing layer deposition, and as the width of the Pirani resistor increases, P 0 increases further according to (1).…”

Section: Design and Fabrication Of Pirani Gauges Covered By Wafer-lev...mentioning

confidence: 99%

Thin-film encapsulation technology for above-IC MEMS wafer-level packaging

Zhang¹,

Cicek²,

Nabki³

et al. 2013

J. Micromech. Microeng.

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This work presents a low-cost and low-temperature wafer-level packaging solution for microelectromechanical systems (MEMS) devices. Heat-sensitive polymer poly(propylene carbonate) is used as the sacrificial material to release the capping layer in a clean and fast manner. Free-standing caps made of amorphous silicon carbide films and as large as 450 μm in diameter are successfully fabricated. To demonstrate the validity of this technology, surface-micromachined Pirani vacuum gauges are fabricated as an example of MEMS devices and encapsulated. Capped Pirani gauges respond to pressure between 1 mTorr and 1 atm. The Pirani gauges are sealed with Parylene C films that exhibit near-hermetic properties and the initial sealing pressure for 300 μm diameter cavities is characterized to be in the range of tens of torr.

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“…The pressure inside the packaged cavity was monitored by measuring the electrical resistance of a Ni Pirani gauge; this method is the same as that used in [22,28,30,33,34]. The molecules as a result of collisions with the surface of the metal.…”

Section: Encapsulation Of a Ni Pirani Gaugementioning

confidence: 99%

Use of nanoporous columnar thin film in the wafer-level packaging of MEMS devices

Lee

Choi

Yoon

2010

J. Micromech. Microeng.

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This paper presents a new packaging technology that uses a nanoporous columnar thin film to seal microelectromechanical system (MEMS) devices at the wafer level. In the proposed packaging process, the processing temperature is 350 • C. The process is relatively inexpensive compared to wafer level packaging processes, because the wafer-bonding step is eliminated and the die size is shrunk. In the suggested approach, a sputtered columnar thin film at room temperature forms vertical nanopores as etch holes, and an air cavity is formed by the removal of a sacrificial layer through the nanopores in the columnar membrane. Subsequent hermetic vacuum packaging of the cavity is achieved by depositing thin films over the membrane under low pressure. The hermeticity of the packaging was verified by using an optical surface morphology microscope to measure the deflection change of the sealing membrane before and after breaking of the vacuum through an interconnected membrane. The long-term hermeticity was monitored by measuring the maximum central deflection of the PECVD sealing layer over a period of 170 days. The precise pressure (0.7 Torr) and short-term (30 days) pressure change inside the cavity were measured by encapsulated Ni Pirani gauges, representing packaged freestanding MEMS devices.

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Pirani pressure sensor for smart wafer-level packaging

Cited by 22 publications

References 15 publications

Single-Walled Carbon Nanotube Pirani Gauges Prepared by DEP Assembly

Single-Walled Carbon Nanotube Pirani Gauges Prepared by DEP Assembly

Thin-film encapsulation technology for above-IC MEMS wafer-level packaging

Use of nanoporous columnar thin film in the wafer-level packaging of MEMS devices

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